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2N3055G

ON Semiconductor

Complementary Silicon Power Transistors

2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistor...


2N3055G

ON Semiconductor


Octopart Stock #: O-1492008

Findchips Stock #: 1492008-F

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Description
2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features • DC Current Gain − hFE = 20−70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc • Excellent Safe Operati
More View ng Area • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Base Current Total Power Dissipation @ TC = 25°C Derate Above 25°C VCEO VCER VCB VEB IC IB PD 60 70 100 7 15 7 115 0.657 Vdc Vdc Vdc Vdc Adc Adc W W/°C Operating and Storage Junction Temperature Range TJ, Tstg − 65 to +200 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. PD, POWER DISSIPATION (WATTS) 160 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 200 TC, CASE TEMPERATURE (°C) Figure 1. Power Derating *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 1 December, 2005 − Rev. 6 http://onsemi.com 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 115 WATTS TO−204AA (TO−3) CASE 1−07 STYLE 1 MARKING DIAGRAM xxxx55G AYYWW MEX xxxx55 G A YY WW MEX = Device Code xxxx = 2N30 or MJ20 = Pb−Free Package = Location Code = Year = Work Week = Country of Orgin ORDERING INFORMATION Device 2N3055 2N3055G MJ2955 Package TO−204AA TO−204AA (Pb−Free) TO−204AA Shipping 100 Units / Tray 100 Units / Tray 100 Units / Tray MJ2955G TO−204AA (Pb−Free) 100 Units / Tray Preferred devices are recommended choices for future use and best overall value. Publication Order Number: 2N3055/D 2N3055(NPN), MJ2955(PNP) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Thermal Resistance, Junction−to−Case ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol RqJC Max Unit 1.52 _C/W Symbol Min Max Unit OFF CHARACTERISTICS* Collector−Emitter Sustaining Voltage (Note 1) (IC = 200 mAdc, IB = 0) VCEO(sus) 60 − Vdc Collector−Emitter Sustaining Voltage (Note 1) (IC = 200 mAdc, RBE = 100 W) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current (VCE = 30 Vd






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