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2N5458G

ON Semiconductor

N-Channel MOSFET

2N5457, 2N5458 JFETs - General Purpose N−Channel − Depletion N−Channel Junction Field Effect Transistors, depletion mod...


2N5458G

ON Semiconductor


Octopart Stock #: O-1492022

Findchips Stock #: 1492022-F

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Description
2N5457, 2N5458 JFETs - General Purpose N−Channel − Depletion N−Channel Junction Field Effect Transistors, depletion mode (Type A) designed for audio and switching applications. Features • N−Channel for Higher Gain • Drain and Source Interchangeable • High AC Input Impedance • High DC Input Resistance • Low Transfer and Input Capacitance • Low Cros
More View s−Modulation and Intermodulation Distortion • Plastic Encapsulated Package • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Drain −Source Voltage Drain −Gate Voltage Reverse Gate −Source Voltage Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C VDS VDG VGSR IG PD 25 Vdc 25 Vdc −25 Vdc 10 mAdc 310 mW 2.82 mW/°C Operating Junction Temperature TJ 135 °C Storage Temperature Range Tstg −65 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. http://onsemi.com 1 DRAIN 3 GATE 2 SOURCE MARKING DIAGRAM 123 STRAIGHT LEAD BULK PACK 1 2 3 BENT LEAD TAPE & REEL AMMO PACK 2N 545x AYWWG G TO−92 CASE 29 STYLE 5 2N545x = Device Code x = 7 or 8 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping 2N5457 2N5457G 2N5458 TO−92 TO−92 (Pb−Free) TO−92 1000 Units/Box 1000 Units/Box 1000 Units/Box 2N5458G TO−92 (Pb−Free) 1000 Units/Box *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 1 February, 2010 − Rev. 6 Publication Order Number: 2N5457/D 2N5457, 2N5458 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Gate −Source Breakdown Voltage (IG = −10 mAdc, VDS = 0) Gate Reverse Current (VGS = −15 Vdc, VDS = 0) (VGS = −15 Vdc, VDS = 0, TA = 100°C) Gate−Source Cutoff Voltage (VDS = 15 Vdc, iD = 10 nAdc) 2N5457 2N5458 Gate−Source Voltage (VDS = 15 Vdc, iD = 100 mAdc) (VDS = 15 Vdc, iD = 200 mAdc) ON CHARACTERISTICS 2N5457 2N5458 Zero−Gate−Voltage Drain Current (Note 1) (VDS = 15 Vdc, VGS = 0) 2N5457 2N5458 DYNAMIC CHARACTERISTICS Forward Transfer Admittance (Note 1) (VDS = 15 Vdc, VGS = 0, f = 1 kHz) 2N5457 2N5458 Output Admittance Common Source (Note 1) (VDS = 15 Vdc, VGS = 0, f = 1 kHz) Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1 kHz) Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1 kHz) 1. Pulse Width ≤ 630 ms, Duty Cycle ≤ 10%. Symbol V(BR)GSS IGSS VGS(off) VGS IDSS |Yfs| |Yos| Ciss Crss Min Typ






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