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WNSC2D051200D

WeEn

Silicon Carbide Diode

WNSC2D051200D Silicon Carbide Diode Rev.01 - 21 June 2022 Product data sheet 1. General description Silicon Carbide Sc...



WNSC2D051200D

WeEn


Octopart Stock #: O-1503462

Findchips Stock #: 1503462-F

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Description
WNSC2D051200D Silicon Carbide Diode Rev.01 - 21 June 2022 Product data sheet 1. General description Silicon Carbide Schottky diode in a TO252 (DPAK) plastic package, designed for high frequency switched-mode power supplies. h RoHS alogen-Free 2. Features and benefits Lead-Free • Highly stable switching performance • High forward surge capability IFSM • Extremely fast reverse recovery time • Superior in efficiency to Silicon Diode alternatives • Reduced losses in associated MOSFET • Reduced EMI • Reduced cooling requirements • RoHS compliant • High junction operating temperature capability (Tj(max) = 175 °C) 3. Applications • Power factor correction • Telecom / Server SMPS • UPS • PV inverter • PC Silverbox • LED / OLED TV • Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating Conditions VRRM repetitive peak reverse voltage IF(AV) average forward current δ = 0.5 ; square-wave pulse; Tmb ≤ 157 °C; Fig. 1; Fig. 2; Fig. 3 Tj junction temperature Symbol Parameter Conditions Static characteristics VF forward voltage Dynamic characteristics IF = 5 A; Tj = 25 °C; Fig. 5 IF = 5 A; Tj = 150 °C; Fig. 5 Qr recovered charge IF = 5 A; dIF/dt = 500 A/μs; VR = 400 V; Tj = 25 °C; Fig. 7 Notes Values 1200 5 -55 to 175 Notes Min Typ Max - 1.42 1.60 - 1.90 2.30 - 11 - Unit V A °C Unit V V nC WeEn Semiconductors 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 n.c. no...




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