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PCRKA20065F8M1

ON Semiconductor

Extremefast Diode

Extremefast Diode with Solderable Top Metal 650 V, 200 A PCRKA20065F8M1 Features • AEC−Q101 Qualified • Maximum Junction...


PCRKA20065F8M1

ON Semiconductor


Octopart Stock #: O-1517101

Findchips Stock #: 1517101-F

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Description
Extremefast Diode with Solderable Top Metal 650 V, 200 A PCRKA20065F8M1 Features • AEC−Q101 Qualified • Maximum Junction Temperature 175°C • Extremefast Technology with Soft Recovery • Low Forward Voltage (VF = 1.35 V (Typ.) @ IF = 200 A) • Cathode Pad covered with Solderable Metal Layer Applications • Automotive Traction Modules • General Power Mo
More View dules DIE DATA SHEET www.onsemi.com A C ORDERING INFORMATION Part Number Packing Die Size Anode Area Die Thickness Top Metal Back Metal Topside Passivation Wafer Diameter Max Possible Die Per Wafer PCRKA20065F8M1 Wafer (sawn on foil) mils mm 197 × 394 5,000 × 10,000 183 × 381 4,668 × 9,668 3 78 6 mm AlCu + 1.15 mm Ti/NiV/Ag (STM) 0.65 mm NiV/Ag Silicon Nitride plus Polyimide 200 mm 487 ABSOLUTE MAXIMUM RATINGS (TVJ = 25_C unless otherwise noted) Parameter Symbol Repetitive Peak Reverse Voltage DC Forward Current, limited by TJ max VRRM IF Pulsed Forward Current, tp limited by TJ max (Note 2) IFM Operating Junction Temperature TJ Storage Temperature Range Tstg 1. Depends on the thermal properties of assembly. 2. Not subject to production test − verified by design/characterization. Ratings 650 (Note 1) 900 −40 to +175 +17 to +25 Units V A A °C °C © Semiconductor Components Industries, LLC, 2018 1 March, 2022 − Rev. 1 Publication Order Number: PCRKA20065F8M1/D PCRKA20065F8M1 ELECTRICAL CHARACTERISTICS OF THE DIODE (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min. Typ. Max. Units Static Characteristics (Tested on wafers) Breakdown Voltage VBR IR = 1 mA 650 − − V Reverse Leakage Current IR VR = 650 V − − 30 mA Forward Voltage VF IF = 100 A − 1.15 1.7 V Electrical Characteristics (Not subject to production test − verified by design / characterization) Forward Voltage VF TJ = 25_C − 1.35 1.9 V IF = 200 A TJ = 175_C − 1.3 − V Reverse Recovery Charge Qrr Reverse Recovery Current Irr Reverse Recovery Time Trr IF = 200 A, VR = 400 V dIF/dt = 1000 A/ms, TJ = 25_C − 3.2 − mC − 55 − A − 117 − ns Reverse Recovery Charge Qrr Reverse Recovery Current Irr Reverse Recovery Time Trr IF = 200 A, VR = 400 V dIF/dt = 1000 A/ms, TJ = 175_C − 15.1 − mC 122 A − 247 − nS 3. For ordering, technique and other information on onsemi automotive bare die products, please contact [email protected]. Figure 1. Dimensional Outline and Pad Layout www.onsemi.com 2 onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent cov






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