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NDSH50120C Datasheet, ON Semiconductor

NDSH50120C Datasheet, ON Semiconductor

NDSH50120C

datasheet Download (Size : 298.38KB)

NDSH50120C Datasheet
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NDSH50120C diode equivalent, silicon carbide schottky diode.

NDSH50120C

datasheet Download (Size : 298.38KB)

NDSH50120C Datasheet
1.0 · rating-1

Features and benefits


* Max Junction Temperature 175C
* Avalanche Rated 380 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
*.

Application


* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits DATA SHEET www.onsemi.com 1. Catho.

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excelle.

Image gallery

NDSH50120C Page 1 NDSH50120C Page 2 NDSH50120C Page 3

TAGS

NDSH50120C
Silicon
Carbide
Schottky
Diode
ON Semiconductor

Manufacturer


ON Semiconductor (https://www.onsemi.com/)

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