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MSCGLQ40X120CTYZBNMG

Microchip

Power Module

Three-Phase Bridge, Brake, Soft Start, and Solenoid Power Module MSCGLQ40X120CTYZBNMG Product Overview The MSCGLQ40X120C...


MSCGLQ40X120CTYZBNMG

Microchip


Octopart Stock #: O-1522269

Findchips Stock #: 1522269-F

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Description
Three-Phase Bridge, Brake, Soft Start, and Solenoid Power Module MSCGLQ40X120CTYZBNMG Product Overview The MSCGLQ40X120CTYZBNMG device is a three-phase bridge, brake, soft start, and solenoid power module. The following figures show the electrical diagram and pinout location of the device. Figure 1. Electrical Diagram Figure 2. Pinout Location Not
More View e: All ratings are at TJ = 25 °C, unless otherwise specified. CAUTION These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed. Data Sheet © 2023 Microchip Technology Inc. and its subsidiaries DS00004994A - 1 MSCGLQ40X120CTYZBNMG Features The MSCGLQ40X120CTYZBNMG device has the following key features: • Silicon Carbide (SiC) schottky diode • IGBT4 • Low stray inductance • Lead frames for power connections • Si3N4 substrate for improved thermal performance • AlSiC base plate for extended reliability and reduced weight • Extended storage temperature range • Internal thermistor for temperature monitoring Benefits The MSCGLQ40X120CTYZBNMG device has the following benefits: • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction-to-case thermal resistance • RoHS Compliant Application The MSCGLQ40X120CTYZBNMG device has the following applications: • Hybrid Power Device (HPD) for Electro-Mechanical Actuator (EMA) and Electro-Hydrostatic Actuator (EHA) systems • High reliability Power Core Module (PCM) • Modular power module for Power Drive Electronic (PDE) Data Sheet © 2023 Microchip Technology Inc. and its subsidiaries DS00004994A - 2 MSCGLQ40X120CTYZBNMG Electrical Specification 1. Electrical Specification The following sections describe the electrical specifications of the MSCGLQ40X120CTYZBNMG device. 1.1 Q1 to Q6 and Q8 IGBTs (Per IGBT): Three-Phase Bridge and Brake The following table lists the absolute maximum ratings (per IGBT) of the Q1 to Q6 and Q8 IGBTs. Table 1-1. Absolute Maximum Ratings: Q1 to Q6 and Q8 IGBTs Symbol Parameter VCES Collector-emitter voltage IC Continuous collector current TC = 25 °C TC = 100 °C ICM Pulsed collector current TC = 25 °C VGE Gate-emitter voltage PD Power dissipation TC = 25 °C Maximum Ratings 1200 751 401 150 ±20 294 Unit V A V W Note:  1. Q1 to Q6 IGBT device specifications, but output current must be limited due to the shunt resistor. For more details, see 1.7. Electrical Shunt Characteristics. The following table lists the electrical characteristics (per IGBT) of the Q1 to Q6 and Q8 IGBTs. Table 1-2. Electrical Characteristics: Q1 to Q6 and Q8 IGBTs Symbol Characteristic Test Conditions ICES Zero gate voltage VGE = 0V collector current VCE = 1200V VCE(sat) VGE(th) Collector emitter saturation voltage VGE = 15V IC = 40A Gate threshold voltage V






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