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MSCGLQ25X120CRTBL3NG

Microchip

Power Module

Three-Phase Bridge High-Speed IGBT 4 Power Module MSCGLQ25X120CRTBL3NG Product Overview The MSCGLQ25X120CRTBL3NG device ...



MSCGLQ25X120CRTBL3NG

Microchip


Octopart Stock #: O-1522270

Findchips Stock #: 1522270-F

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Description
Three-Phase Bridge High-Speed IGBT 4 Power Module MSCGLQ25X120CRTBL3NG Product Overview The MSCGLQ25X120CRTBL3NG device is a three-phase bridge high-speed 1200V, 25A Insulated-Gate Bipolar Transistor (IGBT) 4 power module. The following figures show the electrical diagram and pinout location of the device. Figure 1. Electrical Diagram Figure 2. Pinout Location Note: All ratings are at TJ = 25 °C, unless otherwise specified. CAUTION These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed. Data Sheet © 2023 Microchip Technology Inc. and its subsidiaries DS00005017A - 1 Features The MSCGLQ25X120CRTBL3NG device has the following key features: • High-Speed IGBT 4 – Low voltage drop – Low leakage current – Low switching losses • Silicon Carbide (SiC) Schottky Diode – Zero reverse recovery – Zero forward recovery – Temperature independent switching behavior – Positive temperature coefficient on VF • Very low stray inductance • Ultra low weight and profile • Kelvin source for easy drive • Si3N4 substrate with thick copper for improved thermal performance • Internal thermistor for temperature monitoring • Extended temperature range Benefits The MSCGLQ25X120CRTBL3NG device has the following benefits: • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction-to-case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Very integrated power co...




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