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FDMC2674


Part Number FDMC2674
Manufacturer ON Semiconductor
Title N-Channel MOSFET
Description UltraFET device combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for RDS(on), low ESR, low to...
Features
• Max RDS(on) = 366 mW at VGS = 10 V, ID = 1.0 A
• Typ Qg = 12.7 nC at VGS = 10 V
• Low Miller Charge
• Low Qrr Body Diode
• Optimized Efficiency at High Frequencies
• UIS Capability (Single Pulse and Repetitive Pulse)
• Pb−Free, Halide Free and RoHS Compliant Applications
• DC−DC Converters and Off...

File Size 275.65KB
Datasheet FDMC2674 PDF File








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FDMC2674 : „ Max rDS(on) = 366mΩ at VGS = 10V, ID = 1A „ Typ Qg = 12.7nC at VGS = 10V „ Low Miller charge „ Low Qrr Body Diode „ Optimized efficiency at high frequencies „ UIS Capability ( Single Pulse and Repetitive Pulse) „ RoHS Compliant tm UltraFET® device combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Applications „ DC/DC converters and Off-Line UPS „ Distributed Power Architectures Bottom 5 6 7 8 D 1 D D D Top 5 6 S G 4 3 2 1 4 3 2 7 8 S S MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symb.




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