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FDC6420C Datasheet PDF


Part Number FDC6420C
Manufacturer ON Semiconductor
Title Dual-Channel MOSFET
Description ...
Features ...

File Size 306.69KB
Datasheet FDC6420C PDF File








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FDC6401N : This Dual N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 3.0 A, 20 V. RDS(ON) = 70 mW @ VGS = 4.5 V RDS(ON) = 95 mW @ VGS = 2.5 V • Low Gate Charge (3.3 nC) • High Performance Trench Technology for Extremely Low RDS(ON) • High Power and Current Handling Capability • This is a Pb−Free and Halide Free Device Applications • DC/DC Converter • Battery Protection • Power Management ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Parameter Value Unit VDSS V.

FDC6401N : This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 3.0 A, 20 V. RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 95 mΩ @ VGS = 2.5 V • Low gate charge (3.3 nC) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability Applications • DC/DC converter • Battery Protection • Power Management D2 S1 D1 4 5 G2 3 2 1 SuperSOT TM -6 S2 G1 TA=25 C unless otherwise noted o 6 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source.

FDC640P : This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications for a wide range of gate drive voltages. Features • -4.5 A, -20 V. RDS(ON) = 0.050 Ω @ VGS = -4.5 V RDS(ON) = 0.077 Ω @ VGS = -2.5 V • • • Rugged gate rating (±12V). High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). Applications • Load switch • Battery protection • Power management D D S 1 6 2 5 SuperSOT -6 TM D D G 3 4 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Drain-S.

FDC640P : .

FDC6420C : These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. Features • Q1 3.0 A, 20V. RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 95 mΩ @ VGS = 2.5 V • Q2 –2.2 A, 20V. RDS(ON) = 125 mΩ @ VGS = –4.5 V RDS(ON) = 190 mΩ @ VGS = –2.5 V • Low gate charge • High performance trench technology for extremely low RDS(ON). • SuperSOT –6 package: small footprint (72.

FDC642P : This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical. Features • • • • • -4 A, -20 V. RDS(ON) = 0.065 Ω @ VGS = -4.5 V RDS(ON) = 0.100 Ω @ VGS = -2.5 V Fast switching speed. Low gate charge (7.2nC typical). High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).

FDC642P : „ Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.0 A „ Max rDS(on) = 100 mΩ at VGS = -2.5 V, ID = -3.2 A „ Fast switching speed „ Low gate charge (11nC typical) „ High performance trench technology for extremely low rDS(on) „ SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1 mm thick) „ Termination is Lead-free and RoHS Compliant This P-Channel 2.5V specified MOSFET is produced using ON Semicondcutor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small foot.

FDC642P-F085 : MOSFET – P-Channel, POWERTRENCH -20 V, -4 A, 100 mW FDC642P-F085, FDC642P-F085P Features • Typ RDS(on) = 52.5 mW at VGS = −4.5 V, ID = −4 A • Typ RDS(on) = 75.3 mW at VGS = −2.5 V, ID = −3.2 A • Fast Switching Speed • Low Gate Charge (6.9 nC Typical) • High Performance Trench Technology for Extremely Low RDS(on) • SUPERSOTt−6 Package: Small Footprint (72% Smaller than Standard SO−8); Low Profile (1 mm Thick) • AEC−Q101 Qualified and PPAP Capable • This Device is Pb−Free and is RoHS Compliant Applications • Load Switch • Battery Protection • Power management www.onsemi.com TSOT23 6−Lead CASE 419BL MARKING DIAGRAM &E&Y &.642&G 1 XXX = Specific Device Code &E = Space Designator &Y = Year of Pr.

FDC642P-F085P : MOSFET – P-Channel, POWERTRENCH -20 V, -4 A, 100 mW FDC642P-F085, FDC642P-F085P Features • Typ RDS(on) = 52.5 mW at VGS = −4.5 V, ID = −4 A • Typ RDS(on) = 75.3 mW at VGS = −2.5 V, ID = −3.2 A • Fast Switching Speed • Low Gate Charge (6.9 nC Typical) • High Performance Trench Technology for Extremely Low RDS(on) • SUPERSOTt−6 Package: Small Footprint (72% Smaller than Standard SO−8); Low Profile (1 mm Thick) • AEC−Q101 Qualified and PPAP Capable • This Device is Pb−Free and is RoHS Compliant Applications • Load Switch • Battery Protection • Power management www.onsemi.com TSOT23 6−Lead CASE 419BL MARKING DIAGRAM &E&Y &.642&G 1 XXX = Specific Device Code &E = Space Designator &Y = Year of Pr.

FDC642P_F085 : FDC642P_F085 P-Channel PowerTrench® MOSFET FDC642P_F085 P-Channel PowerTrench® MOSFET -20V, -4A, 100mΩ Features „ Typ rDS(on) = 52.5mΩ at VGS = -4.5V, ID = -4A „ Typ rDS(on) = 75.3mΩ at VGS = -2.5V, ID = -3.2A „ Fast switching speed „ Low gate charge(6.9nC typical) „ High performance trench technology for extremely low rDS(on) „ SuperSOTTM-6 package:small footprint(72% smaller than standard SO-8);low profile(1mm thick). „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Load switch „ Battery protection „ Power management June 2009 S D D SuperSOT TM-6 G D D S4 D5 D6 3G 2D 1D ©2009 Fairchild Semiconductor Corporation FDC642P_F085 Rev. A 1 www.fairchildsemi.com FDC642P_F085 P-.

FDC6432SH : Features This complementary P-Channel MOSFET with SyncFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for providing an extremely low RDS(ON) in a small package. Applications DC/DC converter Power management • SyncFET 2.4 A, 30V RDS(ON) = 90 mΩ @ VGS = 10 V RDS(ON) = 105 mΩ @ VGS = 4.5 V • P channel –2.5 A, –12V R RDS(ON) = 90 mΩ @ VGS = –4.5 V RDS(ON) = 125 mΩ @ VGS = –2.5 V RDS(ON) = 220 mΩ @ VGS = –1.8 V • Fast switching speed. • High performance trench technology for extremely low RDS(ON) D2 S1 D1 SuperSOT TM-6 Pin 1 G2 S2 G1 SuperSOT™-6 D1,2 4 S1.

FDC645N : This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Applications • DC/DC converter Features • 5.5 A, 30 V. RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 26 mΩ @ VGS = 10 V • High performance trench technology for extremely low RDS(ON) • Low gate charge (13 nC typical) • High power and current handling capability S D D SuperSOT TM-6 G D D 1 6 2 5 3 4 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain.




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