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FDP2532

Part Number FDP2532
Manufacturer ON Semiconductor
Title N-Channel MOSFET
Description MOSFET – N-Channel, POWERTRENCH) 150 V, 79 A, 16 mW FDP2532, FDB2532 Features • RDS(on) = 14 mW (Typ.) @ VGS = 10 V, ID = 33 A • QG(tot) = 82 nC ...
Features
• RDS(on) = 14 mW (Typ.) @ VGS = 10 V, ID = 33 A
• QG(tot) = 82 nC (Typ.) @ VGS = 10 V
• Low Miller Charge
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• These Devices are Pb−Free, Halide Free and are RoHS Compliant Applications
• Consumer Appliances
• Synchronous Rectif...

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Datasheet FDP2532 PDF File







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FDP2532 : FDB2532 / FDP2532 / FDI2532 August 2002 FDB2532 / FDP2532 / FDI2532 N-Channel PowerTrench® MOSFET 150V, 79A, 16mΩ Features • r DS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 33A • Qg(tot) = 82nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82884 Applications • DC/DC converters and Off-Line UPS • Distributed Power Architectures and VRMs • Primary Switch for 24V and 48V Systems • High Voltage Synchronous Rectifier • Direct Injection / Diesel Injection Systems • 42V Automotive Load Control • Electronic Valve Train Systems D DRAIN (FLANGE) SOURCE DRAIN GATE SOURCE GATE DRAIN (FLANG.

FDP2532 : isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous;@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 79 56 300 PD Total Dissipation 310 Tj Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth.




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