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APTM120UM70DAG

Microsemi

Single switch

APTM120UM70DAG Single switch with Series diodes MOSFET Power Module VDSS = 1200V RDSon = 70m typ @ Tj = 25°C ID = 171...


Microsemi

APTM120UM70DAG

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APTM120UM70DAG Single switch with Series diodes MOSFET Power Module VDSS = 1200V RDSon = 70m typ @ Tj = 25°C ID = 171A @ Tc = 25°C SK Application  Zero Current Switching resonant mode S D Features  Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance G DK - Low gate charge - Avalanche energy rated - Very rugged  Kelvin source for easy drive  Very low stray inductance - Symmetrical design - M5 power connectors  High level of integration  AlN substrate for improved thermal performance Benefits  Outstanding performance at high frequency operation  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Low profile  RoHS Compliant Absolute maximum ratings Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage ID Continuous Drain Current 1200 V Tc = 25°C 171 Tc = 80°C 126 A IDM VGS RDSon Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance 684 ±30 V 80 m PD Maximum Power Dissipation Tc = 25°C 5000 W IAR Avalanche current (repetitive and non repetitive) EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 24 A 50 3200 mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTM120UM70DAG Rev 2 October, 2012 www.microsemi.com 1–7 APTM120UM70DAG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics ...




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