DatasheetsPDF.com

IS64WV2568FALL Datasheet PDF


Part Number IS64WV2568FALL
Manufacturer ISSI
Title 256K x 8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM
Description The ISSI IS61/64WV2568FALL/FBLL are high-speed, low power, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSI's hig...
Features
 High-speed access time: 8, 10ns, 12ns
 Low Active Current: 35mA (Max., 10ns, I-temp)
 Low Standby Current: 10 mA (Max., I-temp)
 Single power supply
  – 1.65V-2.2V VDD(IS61/64WV2568FALL)
  – 2.4V-3.6V VDD (IS61/64WV2568FBLL)
 Three state outputs
 Industrial and Automotive temperature support
 Le...

File Size 887.31KB
Datasheet IS64WV2568FALL PDF File








Similar Ai Datasheet

IS64WV2568FBLL : The ISSI IS61/64WV2568FALL/FBLL are high-speed, low power, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power devices. When CS# is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE#) controls both writing and reading of the memory. The IS61/64WV2568FALL/FBLL are packaged in the JEDEC standard 44-pin TSOP (TYPE II), 36-pin .




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)