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IS62WV12816DALL Datasheet PDF


Part Number IS62WV12816DALL
Manufacturer ISSI
Title ULTRA LOW POWER CMOS STATIC RAM
Description The ISSI IS62/65WV12816DALL/DBLL are high-speed, 2M bit static RAMs organized as 128K words by 16 bits. It is fabricated using ISSI's high-perform...
Features
• High-speed access time: 35ns, 45ns, 55ns
• CMOS low power operation
  – 36 mW (typical) operating
  – 9 µW (typical) CMOS standby
• TTL compatible interface levels
• Single power supply
  – 1.8V ± 10% Vdd (IS62/65WV12816DALL)
  – 2.5V--3.6V Vdd (IS62/65WV12816DBLL)
• Fully static operation: no clock or ...

File Size 415.50KB
Datasheet IS62WV12816DALL PDF File








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IS62WV12816DBLL : The ISSI IS62/65WV12816DALL/DBLL are high-speed, 2M bit static RAMs organized as 128K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices. When CS1 is HIGH (deselected) or when CS2 is low (deselected) or when CS1 is low, CS2 is high and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory..




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