DatasheetsPDF.com

BC557B


Part Number BC557B
Manufacturer ON Semiconductor
Title PNP Epitaxial Silicon Transistor
Description PNP Epitaxial Silicon Transistor BC556, BC557, BC558, BC559, BC560 Features • Switching and Amplifier • High−Voltage: BC556, VCEO = −65 V • Low−N...
Features
• Switching and Amplifier
• High−Voltage: BC556, VCEO = −65 V
• Low−Noise: BC559, BC560
• Complement to BC546, BC547, BC548, BC549, and BC550
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Valu...

File Size 202.56KB
Datasheet BC557B PDF File








Similar Ai Datasheet

BC557 : BC556 ... BC559 BC556 ... BC559 General Purpose PNP Transistors Universal-PNP-Transistoren IC = -100 mA hFE ~ 120/200/400 Tjmax = 150°C VCEO = -30 ...-65 V Ptot = 500 mW Version 2018-02-01 16 9 18 TO-92 (10D3) CBE 2 x 2.54 Typical Applications Signal processing, (1) Switching, Amplification Commercial grade 1) Features General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Mechanical Data 1) WEEE Typische Anwendungen Signalverarbeitung, Schalten, Verstärken Standardausführung 1) Besonderheiten Universell anwendbar Drei Stromverstärkungsklassen RoHS Pb ELV Konform zu RoHS, REACH, Konfliktmineralien 1) Mechanische Daten 1) 4.6±0.1 (1) Taped i.

BC557 : FEATURES • High Voltage • Complement to BC546,BC547,BC548 Plastic-Encapsulate Transistors BC556/BC557/BC558 (PNP) Maximum Ratings (Ta=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage BC556 BC557 BC558 Collector-Emitter Voltage BC556 BC557 BC558 Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature 1. COLLECTO 2. BASE 3. EMITTER TO-92 Value -80 -50 -30 -65 -45 -30 -5 -0.1 625 200 150 -55~+150 Unit V V V A mW /W GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Page:P4 -P1 Plastic-Encapsulate Transistors BC556/BC557/BC558 .

BC557 : SYMBOL Collector Emitter Voltage VCEO Collector Emitter Voltage VCES Collector Base Voltage VCBO Emitter Base Voltage VEBO Collector Current Continuous IC Collector Current Peak ICM Base Current Peak IBM Emitter Current Peak IEM Power Dissipation at Ta=25ºC PD Derate Above 25ºC Storage Temperature Tstg Junction Temperature Tj BC556 65 80 80 BC557 45 50 50 5 100 200 200 200 500 4.0 - 65 to +150 150 BC558 30 30 30 THERMAL RESISTANCE Junction to Ambient in free air Rth (j-a) 250 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage VCEO IC=2mA, IB=0 Collector Base Voltage VCBO IC=100µA,.

BC557 : BC557, 557B General Purpose Transistor Features: • PNP Silicon Planar Epitaxial Transistors. • Especially Suited For use in Driver Stages of Audio Amplifiers, Low Noise Input Stages of Tape Recorders, HI-FI Amplifiers, Signal Processing Circuits of Television Receivers. TO-92 Plastic Package Dimensions A B C D E F G H K Minimum Maximum 4.32 5.33 4.45 5.20 3.18 4.19 0.41 0.55 0.35 0.50 5° 1.40 1.14 1.53 12.70 - Dimensions : Millimetres Pin Configuration 1. Emitter 2. Base 3. Collector Page 1 31/05/05 V1.0 BC557, 557B General Purpose Transistor Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage .

BC557 : PNP transistor in a TO-92; SOT54 plastic package. NPN complements: BC546 and BC547. PINNING PIN 1 2 3 emitter base collector DESCRIPTION handbook, halfpage1 2 3 2 MAM281 3 1 Fig.1 Simplified outline (TO-92; SOT54) and symbol. ORDERING INFORMATION TYPE NUMBER BC556 BC557 NAME SC-43A PACKAGE DESCRIPTION plastic single-ended leaded (through hole) package; 3 leads VERSION SOT54 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage BC556 BC557 collector-emitter voltage BC556 BC557 emitter-base voltage collector current (DC) peak collector current peak base current total .

BC557 : Elektronische Bauelemente BC556, B, C BC557, A, B, C BC558, A, B, C FEATURES PNP Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 Power dissipation PCM: Collector current ICM: Collector-base voltage VCBO: 0.625 W (Tamb=25℃) - 0.1 A BC556 BC557 BC558 -80 -50 -30 V V V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1 2 3 1 23 1. COLLECTOR 2. BASE 3. EMITTER ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage Collector-emitter breakdown voltage BC556 BC557 BC558 BC556 BC557 BC558 VCBO Ic= -100µA , IE=0 VCEO = - 2mA, IB=0 Emitter-b.

BC557 : BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor January 2016 BC556 / BC557 / BC558 / BC559 / BC560 PNP Epitaxial Silicon Transistor Features • Switching and Amplifier • High-Voltage: BC556, VCEO = -65 V • Low-Noise: BC559, BC560 • Complement to BC546, BC547, BC548, BC549, and BC550 123 Straight Lead Bulk Packing TO-92 1. Collector 12 3 2. Base 3. Emitter Bent Lead Tape & Reel Ammo Packing Ordering Information Part Number BC556ABU BC556ATA BC556BTA BC556BTF BC556BTFR BC557ATA BC557BTA BC557BTF BC558BTA BC559BTA BC559CTA BC560CTA Marking BC556A BC556A BC556B BC556B BC556B BC557A BC557B BC557B BC558B BC559B BC559C BC560C Package TO-92 3L TO-92 3L TO-92 3L TO.

BC557 : Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Total Device Dissipation Alumina Substrate TA=25°C Junction and Storage Temperature Range BC556 -65 -80 BC557 -45 -50 -5.0 100 625 -55 to +150 BC558 -30 -30 Unit V V V mA mW/° C °C TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 Rev. A/CH Page 1 of 7 Small Signal General Purpose Transistors (PNP) BC556/BC557/BC558 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Off Characteristics Symbol Description V(BR)CEO V(BR)CBO V(BR)EBO Collector-Emitter Breakdown Volt.

BC557 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors PNP Silicon COLLECTOR 1 BC556,B BC557,A,B,C BC558B 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC556 BC557 BC558 Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO –65 –45 –30 Vdc VCBO –80 –50 –30 Vdc VEBO –5.0 Vdc IC –100 mAdc PD 625 mW 5.0 mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 Watt 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to .

BC557 : PNP Epitaxial Silicon Transistor BC556, BC557, BC558, BC559, BC560 Features • Switching and Amplifier • High−Voltage: BC556, VCEO = −65 V • Low−Noise: BC559, BC560 • Complement to BC546, BC547, BC548, BC549, and BC550 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector - Base Voltage VCBO V BC556 −80 BC557 / BC560 −50 BC558 / BC559 −30 Collector - Emitter Voltage VCEO V BC556 −65 BC557 / BC560 −45 BC558 / BC559 −30 Emitter - Base Voltage VEBO −5 V Collector Current (DC) IC −100 mA Peak Collector Current (Pulse) ICP −200 mA Peak Base Curre.

BC557 : SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES For Complementary With NPN Type BC546/547/548. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage BC556 BC557 BC558 Collector-Emitter Voltage BC556 BC557 BC558 Emitter-Base Voltage BC556 BC557 BC558 BC556 Collector Current BC557 BC558 BC556 Emitter Current BC557 BC558 Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg RATING -80 -50 -30 -65 -45 -30 -5 -5 -5 -100 -100 -100 100 100 100 625 150 -55 150 UNIT V V V mA mA mW L M C BC556/7/8 EPITAXIAL PLANAR PNP TRANSISTOR BC JA KE G D H FF 1 23 N DIM MILLIME.

BC557 : .

BC557 : PNP transistor in a TO-92; SOT54 plastic package. NPN complements: BC546 and BC547. PINNING PIN 1 2 3 emitter base collector DESCRIPTION handbook, halfpage1 2 3 2 MAM281 3 1 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb collector-base voltage BC556 BC557 collector-emitter voltage BC556 BC557 emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature open emitter open base open collector Tamb ≤ 25 °C MI.

BC557 : TO-92(R) PNP 。Silicon PNP transistor in a TO-92(R) Plastic Package.  / Features ,。 Low current, Low voltage. / Applications 。 General purpose and switching application. / Equivalent Circuit / Pinning 123 PIN1:Emitter PIN 2:Base PIN 3:Collector / hFE Classifications & Marking hFE Classifications Symbol hFE Range A 125~250 B 220~475 C 420~800 http://www.fsbrec.com 1/6 BC557 Rev.E Mar.-2016 DATA SHEET / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Emitter Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VC.

BC557 : Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 ... BC 550 BC556/557/558/559/560 PNP Epitaxial Silicon Transistor TO-92 1. COLLECTOR 2. BASE 3. EMITTER Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage : BC556 : BC557/560 : BC558/559 VCEO Collector-Emitter Voltage : BC556 : BC557/560 : BC558/559 VEBO IC PC TJ TSTG Emitter-Base Voltage Collector Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature Value -80 -50 -30 -65 -45 -30 -5 -100 500 150 -65 ~ 150 Units V V V V V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Sy.

BC557 : ·High Voltage ·Complement to Type BC546,BC547,BC548 APPLICATIONS ·For TV and home appliance equipment. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage BC556 BC557 BC558 BC556 BC557 BC558 IC Collector Current-Continuous PC Collector Power Dissipation Rth j-a Thermal Resistance,Junction to Ambient TJ Junction Temperature Tstg Storage Temperature Range VALUE -80 -50 -30 -65 -45 -30 UNIT V V -6 V -100 mA 625 mW 200 ℃/W 150 -55~150 ℃ ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Transistor ELECTRICAL CHARACTERISTICS TC=25℃ u.

BC557A : BC556 ... BC559 BC556 ... BC559 General Purpose PNP Transistors Universal-PNP-Transistoren IC = -100 mA hFE ~ 120/200/400 Tjmax = 150°C VCEO = -30 ...-65 V Ptot = 500 mW Version 2018-02-01 16 9 18 TO-92 (10D3) CBE 2 x 2.54 Typical Applications Signal processing, (1) Switching, Amplification Commercial grade 1) Features General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Mechanical Data 1) WEEE Typische Anwendungen Signalverarbeitung, Schalten, Verstärken Standardausführung 1) Besonderheiten Universell anwendbar Drei Stromverstärkungsklassen RoHS Pb ELV Konform zu RoHS, REACH, Konfliktmineralien 1) Mechanische Daten 1) 4.6±0.1 (1) Taped i.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)