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ISC046N13NM6

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MOSFET

ISC046N13NM6 MOSFET OptiMOSTM6Power-Transistor,135V Features •N-channel,normallevel •Verylowon-resistanceRDS...


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ISC046N13NM6

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ISC046N13NM6 MOSFET OptiMOSTM6Power-Transistor,135V Features N-channel,normallevel Verylowon-resistanceRDS(on) ExcellentgatechargexRDS(on)product(FOM) Verylowreverserecoverycharge(Qrr) 100%avalanchetestedg 175°Coperatingtemperature Optimizedformotordrivesandbatterypoweredapplications Pb-freeleadplating;RoHScompliant Halogen-freeaccordingtoIEC61249-2-21 MSL1classifiedaccordingtoJ-STD-020 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 135 V RDS(on),max 4.6 mΩ ID 142 A Qoss 112 nC QG(0V...10V) 65 nC Qrr(500A/µs) 85 nC Type/OrderingCode ISC046N13NM6 Package PG-TDSON-8 SuperSO8 8 7 65 56 78 1 23 4 4321 Drain Pin 5-8 Gate *1 Pin 4 Source *1: Internal body diode Pin 1-3 Marking 046N13N6 RelatedLinks - Final Data Sheet 1 Rev.2.0,2023-10-16 OptiMOSTM6Power-Transistor,135V ISC046N13NM6 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...




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