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1ED3142MU12F

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Single-channel 3kV (rms) isolated gate driver

EiceDRIVER™ 1ED314xMU12F (1ED-X3 Compact) Datasheet 1ED3140MU12F, 1ED3141MU12F, 1ED3142MU12F Single-channel 3 kV (rms) ...


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1ED3142MU12F

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Description
EiceDRIVER™ 1ED314xMU12F (1ED-X3 Compact) Datasheet 1ED3140MU12F, 1ED3141MU12F, 1ED3142MU12F Single-channel 3 kV (rms) isolated gate driver IC with separate outputs Features Single-channel isolated gate driver For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs Up to 6.5 A typical peak output current 45 ns propagation delay with 7 ns part-to-part matching (skew) 35 V absolute maximum output supply voltage High common-mode transient immunity CMTI > 300 kV/µs Separate source and sink outputs with active shutdown and short circuit clamping Galvanically isolated coreless transformer gate driver 3.3 V and 5 V input supply voltage Suitable for operation at high ambient temperature and in fast switching applications UL 1577 certification VISO = 3.0 kV (rms) for 1 min Potential applications EV charging Energy storage systems Solar inverters Server and telecom switched mode power supplies (SMPS) UPS-systems AC and brushless DC motor drives Commercial air-conditioning (CAC) High voltage DC-DC converter and DC-AC inverter Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Description The 1ED314xMU12F gate driver ICs are galvanically isolated single channel gate driver ICs for IGBT, MOSFET and SiC MOSFET in DSO-8 150 mil package. They provide a typical output current of up to 6.5 A. The input logic pins operate on a wide input voltage range from 3 V to 6.5 V using CMOS thres...




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