DatasheetsPDF.com

EPC2023

EPC

Power Transistor

EPC2023 – Enhancement Mode Power Transistor Preliminary Specification Sheet Features: • VDS, 30 V • Maximum RDS(ON), 1....



EPC2023

EPC


Octopart Stock #: O-1529263

Findchips Stock #: 1529263-F

Web ViewView EPC2023 Datasheet

File DownloadDownload EPC2023 PDF File







Description
EPC2023 – Enhancement Mode Power Transistor Preliminary Specification Sheet Features: VDS, 30 V Maximum RDS(ON), 1.3 mΩ ID, 60 A Pb-Free (RoHS Compliant), Halogen Free Applications: High Frequency DC-DC Conversion Motor Drive Industrial Automation Synchronous Rectification Inrush Protection Point-of-Load (POL) Converters EPC2023 eGaN® FETs are supplied only in passivated die form with solder bars Die Size: 6.05 mm x 2.3 mm MAXIMUM RATINGS Parameter VDS (Maximum Drain – Source Voltage) VGS (Gate – Source Maximum Voltage Range) ID Continuous Drain Current, 25 °C, θJA = 13.5) ID (Maximum Pulsed Drain Current, 25 °C, Tpulse = 300 µs) TJ (Optimum Temperature Range) STATIC CHARACTERISTICS Value 30 V -4 V < VGS < 6 V 60 A 590 A -40 °C < TJ < 150 °C Parameter IDSS (Maximum Drain – Source Leakage) RDS(ON) (Maximum RDS(ON) ) RDS(ON) (Typical RDS(ON) ) VGS(TH) (Gate – Source Threshold Voltage) IGSS (Gate – Source Maximum Positive Leakage) IGSS (Gate – Source Maximum Negative Leakage) TJ = 25 °C unless otherwise stated Specifications are with Substrate shorted to Source where applicable Conditions VDS = 24 V, VGS = 0 V VGS = 5 V, ID = 40 A VGS = 5 V, ID = 40 A VDS = VGS, ID = 20 mA VGS = 5 V VGS = -4 V Value 1.0 mA 1.3 mΩ 1 mΩ 0.7 V < VGS(TH) < 2.5 V 9 mA -1 mA Subject to Change without Notice www.epc-co.com COPYRIGHT 2014 Page 1 EPC2023 – Enhancement Mode Power Transistor Preliminary Specification Sheet DYNAMIC CHARACTERISTICS Parameter Conditions CI...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)