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KSC2383

ON Semiconductor

NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor KSC2383 ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted.) S...



KSC2383

ON Semiconductor


Octopart Stock #: O-1529267

Findchips Stock #: 1529267-F

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NPN Epitaxial Silicon Transistor KSC2383 ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted.) Symbol Parameter Value Unit VCBO Collector−Base Voltage 160 V VCEO Collector−Emitter Voltage 160 V VEBO Emitter−Base Voltage 6 V IC Collector Current 1 A IB Base Current 0.5 A TJ Junction Temperature 150 °C TSTG Storage Temperature −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted.) (Note 1) Symbol Parameter Value Unit PD Power Dissipation Derate Above 25_C 900 mW 7.2 mW/°C RθJA Thermal Resistance, Junction−to−Ambient 138 °C/W 1. PCB size: FR−4, 76 mm × 114 mm × 1.57 mm (3.0 inch × 4.5 inch × 0.062 inch) with minimum land pattern size. www.onsemi.com TO−92 3 LF CASE 135AM MARKING DIAGRAM AC2 383X YWW 1: Emitter 2: Collector 3: Base 1 23 A C2383 X YWW = Assembly Code = Device Code =O/Y = Date Code ORDERING INFORMATION Device KSC2383OTA KSC2383YTA Package TO−92 3 LF (Pb−Free) TO−92 3 LF (Pb−Free) Shipping 2000 / Fan−Fold 2000 / Fan−Fold © Semiconductor Components Industries, LLC, 2002 1 March, 2021 − Rev. 3 Publication Order Number: KSC2383/D KSC2383 ELECTRICAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted.) Symbol Parameter Conditi...




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