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F59L1G81MB


Part Number F59L1G81MB
Manufacturer ESMT
Title 1 Gbit (128M x 8) 3.3V NAND Flash Memory
Description The device is a 128Mx8bit with spare 4Mx8bit capacity. The device is offered in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effect...
Features
 Voltage Supply: 3.3V (2.7V~3.6V)
 Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit
 Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte
 Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25us (Max.) - Seri...

File Size 2.01MB
Datasheet F59L1G81MB PDF File








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F59L1G81MA-25BCG2Y : ESMT Flash FEATURES Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25us (Max.) - Serial Access: 25ns (Min.) (3.3V) Memory Cell: 1bit/Memory Cell Fast Write Cycle Time - Program time: 300us - typical - Block Erase time: 3ms - typical Command/Address/Data Multiplexed I/O Port Hardware Data Protection - Program/Erase Lockout During Power Transitions F59L1G81MA (2Y) 1 Gbit (128M x 8) 3.3V NAND Flash Memory Reliable CMOS Floating Gate Technology - ECC Requirement: - 4bit/5.

F59L1G81MA-25BCIG2Y : ESMT Flash FEATURES z Voltage Supply: 3.3V (2.7V~3.6V) z Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte z Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25us (Max.) - Serial Access: 25ns (Min.) (3.3V) z Memory Cell: 1bit/Memory Cell z Fast Write Cycle Time - Program time: 350us - typical - Block Erase time: 3.5ms - typical z Command/Address/Data Multiplexed I/O Port z Hardware Data Protection - Program/Erase Lockout During Power Transitions F59L1G81MA (2Y) Operation Temperature Condition -40°C~85°C 1 Gbit (128M x 8) 3.3V NAND Flash Memory z Rel.

F59L1G81MA-25BG2Y : ESMT Flash FEATURES Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25us (Max.) - Serial Access: 25ns (Min.) (3.3V) Memory Cell: 1bit/Memory Cell Fast Write Cycle Time - Program time: 300us - typical - Block Erase time: 3ms - typical Command/Address/Data Multiplexed I/O Port Hardware Data Protection - Program/Erase Lockout During Power Transitions F59L1G81MA (2Y) 1 Gbit (128M x 8) 3.3V NAND Flash Memory Reliable CMOS Floating Gate Technology - ECC Requirement: - 4bit/5.

F59L1G81MA-25BIG2Y : ESMT Flash FEATURES z Voltage Supply: 3.3V (2.7V~3.6V) z Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte z Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25us (Max.) - Serial Access: 25ns (Min.) (3.3V) z Memory Cell: 1bit/Memory Cell z Fast Write Cycle Time - Program time: 350us - typical - Block Erase time: 3.5ms - typical z Command/Address/Data Multiplexed I/O Port z Hardware Data Protection - Program/Erase Lockout During Power Transitions F59L1G81MA (2Y) Operation Temperature Condition -40°C~85°C 1 Gbit (128M x 8) 3.3V NAND Flash Memory z Rel.

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F59L1G81MA-25TIG2Y : ESMT Flash FEATURES z Voltage Supply: 3.3V (2.7V~3.6V) z Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte z Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25us (Max.) - Serial Access: 25ns (Min.) (3.3V) z Memory Cell: 1bit/Memory Cell z Fast Write Cycle Time - Program time: 350us - typical - Block Erase time: 3.5ms - typical z Command/Address/Data Multiplexed I/O Port z Hardware Data Protection - Program/Erase Lockout During Power Transitions F59L1G81MA (2Y) Operation Temperature Condition -40°C~85°C 1 Gbit (128M x 8) 3.3V NAND Flash Memory z Rel.

F59L1G81MB-25BCG2M : The device is a 128Mx8bit with spare 4Mx8bit capacity. The device is offered in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The device contains 1024 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected Flash cells. A program operation allows to write the 2,112-Byte page in typical 400us and an erase operation can be performed in typical 3ms on a 128K-Byte for X8 device block. Data in the page mode can be read out at 25ns cycle time per Byte. The I/O pi.

F59L1G81MB-25BG2M : The device is a 128Mx8bit with spare 4Mx8bit capacity. The device is offered in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The device contains 1024 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected Flash cells. A program operation allows to write the 2,112-Byte page in typical 400us and an erase operation can be performed in typical 3ms on a 128K-Byte for X8 device block. Data in the page mode can be read out at 25ns cycle time per Byte. The I/O pi.

F59L1G81MB-25BUG2M : The device is a 128Mx8bit with spare 4Mx8bit capacity. The device is offered in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The device contains 1024 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected Flash cells. A program operation allows to write the 2,112-Byte page in typical 400us and an erase operation can be performed in typical 3ms on a 128K-Byte for X8 device block. Data in the page mode can be read out at 25ns cycle time per Byte. The I/O pi.

F59L1G81MB-25TG2M : The device is a 128Mx8bit with spare 4Mx8bit capacity. The device is offered in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The device contains 1024 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected Flash cells. A program operation allows to write the 2,112-Byte page in typical 400us and an erase operation can be performed in typical 3ms on a 128K-Byte for X8 device block. Data in the page mode can be read out at 25ns cycle time per Byte. The I/O pi.




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