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1N4154

Part Number 1N4154
Manufacturer Central Semiconductor
Title Silicon Switching Diode
Description Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com OUTSTANDING...
Features REQUESTING PRODUCT PLATING 1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when ordering (example: 2N2222A TIN/LEAD). 2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number when ordering (example: 2N2222A PBFREE). CONTAC...

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1N4150 : www.vishay.com 1N4150 Vishay Semiconductors Small Signal Fast Switching Diodes DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: DO-35 (DO-204AH) Weight: approx. 125 mg Cathode band color: black Packaging codes / options: TR/10K per 13" reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box FEATURES • Silicon epitaxial planar diode • Low forward voltage drop • AEC-Q101 qualified • High forward current capability • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • High speed switch and general purpose use in computer and industrial applications PARTS TABLE PART ORDERING CODE 1N41.

1N4150 : 1N 4148, 1N 4150, 1N 4151, 1N 4448 Silicon Planar Diodes Silizium-Planar-Dioden Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Glass case Glasgehäuse Weight approx. Gewicht ca. Dimensions / Maße in mm 150...300 mA 50…100 V DO-35 SOD-27 0.13 g see page 16 siehe Seite 16 Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings Type Typ 1N 4148 1N 4150 1N 4151 1N 4448 Reverse voltage Sperrspannung VRM [V] 75 50 50 75 Grenzwerte Reverse Breakdown Voltage Abbruchspannung VRRM [V] 1) 100 50 75 100 1N 4148 1N 4448 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last Repet.

1N4150 : 1N4150 FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 50 V • Repetitive peak reverse voltage:max. 75 V • Repetitive peak forward current: max. 600 mA • Pb / RoHS Free MECHANICAL DATA : Case: DO-35 Glass Case Weight: approx. 0.13g HIGH SPEED SWITCHING DIODE DO - 35 Glass (DO-204AH) 0.079(2.0 )max. Cathode Mark 0.020 (0.52)max. 1.00 (25.4) min. 0.150 (3.8) max. 1.00 (25.4) min. Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.) Parameter Maximum Repetitive Peak Reverse Voltage Maximum Continuous Reverse Voltage Maximum Continuous Forward Current Maximum Powe.

1N4150-1 : • 1N4150-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231 • 1N3600 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231 • SWITCHING DIODES • HERMETICALLY SEALED • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION 1N4150 and 1N4150-1 and 1N3600 MAXIMUM RATINGS Junction Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 300 mA @ TA = +25°C Derating: 2.0 mA dc/°C Above TL = + 75°C @ L = 3/8” Forward Surge Current: 4A, (tp = 1µs); 0.5A (tp = 1s) ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified. Type V BR V RWM I R1 VR = 50 V dc IR = 10 µA V dc 1N3600 1N4150,-1 75 75 V (pk) 50 50 TA = 25°C µA dc 0.1 0.1 1 R2 VR = 50 V dc TA = 150°C .

1N4150-1 : 1N3600, 1N4150 & 1N4150-1 Silicon Switching Diode Features  Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231  Metallurgically Bonded  Hermetically Sealed  Double Plug Construction Maximum Ratings Operating & Storage Temperature: -65°C to +175°C Operating Current: 300 mA @ TA = +25°C Derating: 2 mA DC/°C above TL = +75°C @ L = 3/8” Surge Current A: 2 A (pk) tP = 8.3 ms, VRM = 0 Surge Current B: 4 A (pk) tP = 1 µs, VRM = 0 Rev. V1 Electrical Specifications @ +25°C (unless otherwise Specified) TYPE # VBR IR = 10 μA VRWM 1N3600 1N4150, -1 V dc 75 75 V (pk) 50 50 IR1 VR = 50 Vdc TA = 25°C μA dc 0.1 0.1 IR2 VR = 50 Vdc TA =150°C μA dc 100 100 C Trr IR = 0; f = 1 MHz IF = .

1N4150-1 : 1N4150-1 FEATURES • 1N4150-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF- 19500/231 • SWITCHING DIODE • METALLURGICALLY BONDED • HERMETICALLY SEALED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current A, sine 1uS: Surge Current B, sine 1S: Total Power Dissipation: Operating Current: Derating Factor: D.C. Reverse Voltage (VRWM): -65°C to +175°C -65°C to +175°C 4.0A 0.5A 500mW 200mA, TA= +25°C to +75°C 2mA/°C above TL (3/8”)= +75°C 50V DC ELECTRICAL CHARACTERISTICS VF IR Ambient IF (°C) mA Min Max Ambient Min Max Ambient V V (°C) V (dc) µA µA (°C) 25 1 .54 .62 25 50 - 0.1 25 25 10 .66 .74 150 50 - 100 25 50 .76 .86 .

1N4150-1 : Silicon Switching Diodes 1N4150, 1N4150-1 & 1N3600 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231 • Metallurgically Bonded • Hermetically Sealed • Double Plug Construction Maximum Ratings Operating & Storage Temperature: -65°C to +175°C Operating Current: 300 mA @ TA = +25°C Derating: 2.0 mA dc/°C Above TL = + 75°C @ L = 3/8” Surge Current A: 2A (pk) tp = 8.3 mS, VRM = 0 Surge Current B: 4A (pk) tp = 1 us, VRM = 0 Electrical Specifications @ +25 ºC (Unless Otherwise Specified) TYPE Number 1N3600 1N4150, -1 VBR IR = 10 μA V dc 75 75 VRWM V (pk) 50 50 IR1 VR = 50 Vdc TA = 25 °C μA dc 0.1 0.1 IR2 VR = 50 Vdc TA =150°C μA dc 100 100 Forward Voltage Limits - .

1N4150UR-1 : • 1N4150UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/231 • SWITCHING DIODE • HERMETICALLY SEALED • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION 1N4150UR-1 1N3600UR CDLL4150 CDLL3600 MAXIMUM RATINGS Junction Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 300 mA @ TA = + 25°C Derating: 3.1 mA dc/°C Above TEC = + 110°C Forward Surge Current: 4A, (tp = 1µs); 0.5A (tp = 1s) ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified. Type V BR IR = 10 V RWM I R1 VR = 50 V dc TA = 25°C V (pk) 50 50 µA dc 0.1 0.1 1 R2 VR = 50 V dc TA = 150°C µA dc 100 100 C VR = 0; f = 1 Mhz; trr DIM D F G G1 S MILLIMETERS INCHES MIN MAX MIN MAX 1.60 1..

1N4150UR-1 : 1N4150UR-1 FEATURES • 1N4150UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF- 19500/231 • SWITCHING DIODE • METALLURGICALLY BONDED • HERMETICALLY SEALED • DOUBLE PLUG CONSTRUCTION • ALSO AVAILABLE AS LL4150, CDLL4150, & MLL4150 MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current A, sine 1uS: Surge Current B, sine 1S: Total Power Dissipation: Operating Current: Derating Factor: D.C. Reverse Voltage (VRWM): -65°C to +175°C -65°C to +175°C 4.0A 0.5A 500mW 200mA, TA= +25°C to +110°C 3.1mA/°C above TEC= +110°C 50V DC ELECTRICAL CHARACTERISTICS VF IR Ambient IF (°C) mA Min Max Ambient Min Max Ambient V V (°C) V (dc) µA µA (°C) 25 1 .54 .62 25 50 - 0.1 .

1N4150W : www.vishay.com 1N4150W Vishay Semiconductors Small Signal Fast Switching Diode 1 2 LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models Models Marking Parametric Search Order Samples MECHANICAL DATA Case: SOD-123 Weight: approx. 10.6 mg Packaging codes / options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box FEATURES • Silicon epitaxial planar diode Available • For general purpose and switching • AEC-Q101 qualified available • Molding compound meets UL 94 V-0 flammability rating • Moisture sensitivity level (MSL) 1 • Base P/N-E3 - RoHS-compliant, commercial grade • Base P/N-HE3_A - RoHS-compliant, AEC-Q101 qualified • Material categorization: f.

1N4150W : ® WON-TOP ELECTRONICS 1N4150W / 1N4151W SURFACE MOUNT FAST SWITCHING DIODE Pb Features  Silicon Epitaxial Planar Die Construction  Fast Switching Speed A  Surface Mount Package Ideally Suited for Automatic Insertion  For General Purpose Switching Applications C  Plastic Material – UL Recognition Flammability Classification 94V-0 B Mechanical Data  Case: SOD-123, Molded Plastic  Terminals: Plated Leads Solderable per MIL-STD-202, Method 208  Polarity: Cathode Band  Weight: 0.01 grams (approx.)  Marking: Device Code, See Page 3  Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 E J D H G SOD-123 Dim Min Max A 3.60 3.90 B 2.50 2.

1N4150W : SMD Type SMALL SIGNAL DIODES 1N4150W Diodes +0.10.55 -0.1 +0.11.6 -0.1 Features Silicon Epitaxial Planar Diode Fast general purpose and switching. This diods is also available in other case styles including: the DO-35 case with the type designation 1N4150 and the Mini-MELF case with the type disignation LL4150. SOD-123 2.7+0.1 -0.1 Unit: mm 1.1+0.05 -0.05 3.7+0.1 -0.1 0.50 0.35 0.1max +0.050.1 -0.02 Absolute Maximum Ratings Ta = 25 Paramater Symbol Peak Reverse voktage VRM Maximum Average Rectified Current Io Maximum Power Dissipation at Tamb = 25 Ptot Maximum Forward Voltage Drop at IF = 200mA VF Maximum Reverse Current at VR = 50 V IR Maximum Reverse Recovery Time at.

1N4150W : 1N4150W, 1N4151W SURFACE MOUNT SWITCHING DIODES VOLTAGE 50 - 75 Volts POWER 410 - 500 mW FEATURES • Fast switching Speed • Electrically Identical to Standard JEDEC • High Conductance • Surface Mount Package Ideally Suited for Automatic Insertion • Flat package SOD-123 in stead mini-MELF package. MECHANICAL DATA Case: SOD-123, Plastic Terminals: Solderable per MIL-STD-202, Method 208 Approx. Weight:0.01 gram SOD-123 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS PARAMETER Reverse Voltage Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current at Ta=25OC Peak Forward Surge Current, 8.3ms single half sine-wave superimposed on rated load (JEDEC.

1N4150W-G : www.vishay.com 1N4150W-G Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode • For general purpose and switching • AEC-Q101 qualified available  (part number on request) • Base P/N-G3 - green, commercial grade • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: SOD-123 Weight: approx. 9.4 mg Packaging codes / options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box PARTS TABLE PART ORDERING CODE 1N4150W-G 1N4150W-G3-18 or 1N4150W-G3-08 TYPE MARKING AM CIRCUIT CONFIGURATION Singl.

1N4150W-V : Small Signal Switching Diode 1N4150W-V Vishay Semiconductors Features • Silicon Epitaxial Planar Diode • For general purpose and switching e3 • This diode is also available in other case styles including the DO-35 case with the type des- ignation 1N4150, and the MiniMELF case with the type designation LL4150. • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 17431 Mechanical Data Case: SOD-123 Plastic case Weight: approx. 9.3 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part 1N4150W-V Ordering code 1N4150W-V-GS18 or 1N4150W-V-GS08 Marking A4 Remark.

1N4151 : Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com OUTSTANDING SUPPORT AND SUPERIOR SERVICES PRODUCT SUPPORT Central’s operations team provides the highest level of support to insure product is delivered on-time. • Supply management (Customer portals) • Custom bar coding for shipments • Inventory bonding • Custom product packing • Consolidated shipping options DESIGNER SUPPORT/SERVICES Central’s applications engineering team is ready to discuss your design challenges. Just ask. • Free quick ship samples (2nd day air) • Special wafer diffusions • Online technical data and parametric search .

1N4151 : RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION 1N4151 1N4151 SIGNAL DIODE Absolute Maximum Ratings (Ta=25°C) Items Symbol Ratings Unit Reverse Voltage VR 50 V Reverse Recovery trr 2 ns Time Power Dissipation P 500 mW 3.33mW/°C (25°C) Forward Current IF 300 mA Junction Temp. Tj -65 to 175 °C Storage Temp. Tstg -65 to 175 °C Mechanical Data Items Package Case Lead/Finish Chip Materials DO-35 Hermetically sealed glass Double stud/Solder Plating Glass Passivated 26 MIN Dimensions in millimeters Dimensions (DO-35) DO-35 26 MIN 0.457 DIA. 0.559 4.2 max. 2.0 DIA. max. Electrical Characteristics (Ta=25°C) Ratings Breakdown Voltage IR= 5.0uA Peak Forward Surge Current PW= 1sec. Maximum Forward V.




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