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CMLDM7002AG Datasheet PDF


Part Number CMLDM7002AG
Manufacturer Central Semiconductor
Title SILICON DUAL N-CHANNEL MOSFETS
Description These CENTRAL SEMICONDUCTOR devices are dual N-Channel enhancement-mode MOSFETs, manufactured by the N-Channel DMOS Process, designed for high sp...
Features D IS IDM ISM PD PD PD TJ, Tstg ΘJA 60 60 40 280 280 1.5 1.5 350 300 150 -65 to +150 357 UNITS V V V mA mA A A mW mW mW °C °C/W ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IGSSF, IGSSR VGS=20V, VDS=0 100 IDSS VDS=60V, VGS=0 1....

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Datasheet CMLDM7002AG PDF File








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CMLDM7002A : These CENTRAL SEMICONDUCTOR devices are dual N-Channel enhancement-mode MOSFETs, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM7002A utilizes the USA pinout configuration, while the CMLDM7002AJ utilizes the Japanese pinout configuration. These devices offer low rDS (ON) and low VDS(ON). SOT-563 CASE * Device is Halogen Free by design MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current Maximum Pulsed Source Current Power Dissipation (Note 1) Power Dissipation (Note 2) Power Dissipation (Note 3.

CMLDM7002AJ : These CENTRAL SEMICONDUCTOR devices are dual N-Channel enhancement-mode MOSFETs, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM7002A utilizes the USA pinout configuration, while the CMLDM7002AJ utilizes the Japanese pinout configuration. These devices offer low rDS (ON) and low VDS(ON). SOT-563 CASE * Device is Halogen Free by design MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current Maximum Pulsed Source Current Power Dissipation (Note 1) Power Dissipation (Note 2) Power Dissipation (Note 3.




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