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2N5946


Part Number 2N5946
Manufacturer Motorola
Title NPN SILICON RF POWER TRANSISTORS
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Datasheet 2N5946 PDF File








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2N5941 : 2N5941 (SILICON) 2N5942 The RF Lin.e NPN SILICON RF POWER TRANSISTORS · .. designed primarily for applications as a high-power linear amplifier from 2.0 to 30 MHz, in single sideband mobile, marine and base station equipment. • Specified 28 Volt, 30 MHz Characteristics - Output Power = 40 W (PEP) - 2N5941 = 80 W (PEP) - 2N5942 Minimum Gain = 13 dB Efficiency = 40% Intermodulation Distortion = -30 dB (Max) • Isothermal-Resistor Design Results in Rugged Device • 2N5942 Available as Matched Pairs for Push-Pull Amplifier Applications MATCHING PROCEOURE In the push-pull circuit configuration two device parameters are critical for optimum circuit performance. These parameters are VSE(on) and hFE..

2N5942 : 2N5941 (SILICON) 2N5942 The RF Lin.e NPN SILICON RF POWER TRANSISTORS · .. designed primarily for applications as a high-power linear amplifier from 2.0 to 30 MHz, in single sideband mobile, marine and base station equipment. • Specified 28 Volt, 30 MHz Characteristics - Output Power = 40 W (PEP) - 2N5941 = 80 W (PEP) - 2N5942 Minimum Gain = 13 dB Efficiency = 40% Intermodulation Distortion = -30 dB (Max) • Isothermal-Resistor Design Results in Rugged Device • 2N5942 Available as Matched Pairs for Push-Pull Amplifier Applications MATCHING PROCEOURE In the push-pull circuit configuration two device parameters are critical for optimum circuit performance. These parameters are VSE(on) and hFE..

2N5943 : 2N5943 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation TA = 25°C Derate above 25°C Total Device Dissipation (w Tq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol v CEO v CBO v EBO "C PD Pd TJ' Tstg Value 30 40 3.5 400 1.0 5.7 3.5 0.02 -65 to +200 Unit Vdc Vdc Vdc mAdc Watt mW/°C Watts mW/°C °C CASE 79-02, STYLE 1 TO-39 (TO-205AD) HIGH FREQUENCY TRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Irj = 5.0 mAdc, lg = 0) Co I lector- Base Breakdown Vol.

2N5943 : The 2N5943 is a High Frequency Transistor for General Purpose Amplifier Applications. MAXIMUM RATINGS IC 400 mA VCE PDISS TJ TSTG θJC 30 V 1.0 W @ TA = 25 OC 3.5 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +200 OC 125 OC/W PACKAGE STYLE TO-39 1 = EMITTER 2 = BASE 3 = COLLECTOR CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS BVCEO BVCBO BVEBO IC = 5.0 mA IC = 100 µA IE = 100 µA ICEO VCE = 20 V ICBO VCB = 15 V hFE VCE = 15 V IC = 50 mA VCE(SAT) IC = 100 mA IB = 10 mA VBE(SAT) ft Ccb IC = 100 mA VCE = 15 V VCB = 30 V IB = 10 mA IC = 25 mA IC = 50 mA IC = 100 mA f = 200 MHz f = 200 MHz f = 200 MHz f = 100 KHz Ceb VCB = 0.5 V f = 100 KHz hfe VCE = 15 V IC = 50 mA f = .

2N5944 : HG Semiconductors 2N5944HG RF POWER TRANSISTOR ROHS Compliance,Silicon NPN POWER TRANSISTOR HG Note : Above parameters , ratings , limits and conditions are subject to change www.HGSemi.com Sep. 1998 .

2N5944 : .

2N5944 : 2N5944 (SILICON) 2N5945 2N5946 The RF Line NPN SILICON RF POWER TRANSISTORS . designed for 7.0 to 15 Volts, UHF large signal amplifier applications required in industrial and commercial FM equipment operating in the 400 to 960 MHz range. • Specified 12.5 Volt, 470 MHz Characteristics- Power Output = 2 0 W 2N5944 4.0 W -- 2N5945 10 W - 2N5946 Minimum Gain = 9.0 dB - 2N5944 8.0 dB - 2N5945 6.0 dB - 2N5946 Efficiency = 60% Minimum • RF ballasting provides protection against device damage due to load mismatch • Characterized with series equivalent large-signal Impedance parameters 2.0,4,0, 10 W - 470 MHz RF POWER TRANSISTORS NPN SILICON MAXIMUM RATINGS Rating LSymbol 2N5944i 2N 5945 2N5946 U.

2N5944 : .

2N5945 : 2N5944 (SILICON) 2N5945 2N5946 The RF Line NPN SILICON RF POWER TRANSISTORS . designed for 7.0 to 15 Volts, UHF large signal amplifier applications required in industrial and commercial FM equipment operating in the 400 to 960 MHz range. • Specified 12.5 Volt, 470 MHz Characteristics- Power Output = 2 0 W 2N5944 4.0 W -- 2N5945 10 W - 2N5946 Minimum Gain = 9.0 dB - 2N5944 8.0 dB - 2N5945 6.0 dB - 2N5946 Efficiency = 60% Minimum • RF ballasting provides protection against device damage due to load mismatch • Characterized with series equivalent large-signal Impedance parameters 2.0,4,0, 10 W - 470 MHz RF POWER TRANSISTORS NPN SILICON MAXIMUM RATINGS Rating LSymbol 2N5944i 2N 5945 2N5946 U.

2N5945 : The ASI 2N5945 is Designed for FM Land Mobile Applications in the 400 to 960 MHz. FEATURES: • Common Emitter • PG = 9.0 dB at 2.0 W/470 MHz • Omnigold™ Metalization System MAXIMUM RATINGS IC 0.8 A VCBO 36 V VCEO 16 V VEBO 4.0 V PDISS 15 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 11.6 °C/W PACKAGE STYLE .280 4L STUD A 45° C BE E B D C J E I F G H K #8-32 UNC DIM MINIMUM inches / mm MAXIMUM inches / mm A 1.010 / 25.65 1.055 / 26.80 B .220 / 5.59 .230 /5.84 C .270 / 6.86 .285 / 7.24 D .003 / 0.08 .007 / 0.18 E .117 / 2.97 .137 / 3.48 F .572 / 14.53 G .130 / 3.30 H .245 / 6.22 .255 / 6.48 I .640 / 16.26 J .175 / 4.45.

2N5945 : 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. i., Ona. 2N5945 TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 NPN SILICON RF POWER TRANSISTOR FEATURES: • Common Emitter • PG = 9.0 dB at 2.0 W/470 MHz • OmnigolcFM Metalization System MAXIMUM RATINGS Ic 0.8 A VCBO 36V VCEO 16V VEBO 4.0V PDISS 1 5 W @ T C = 2 5 °C L -65 °C to +200 °C TSTG -65 °C to +150 °C 9jc 11.6°C/W PACKAGE STYLE .280 4L STUD 45"_s -, IC Era LJLi n rc-i E T"nri ' ' p-HJ ''— *8-32 UNC DIM MINIMUM MAXIMUM A 1,010/25.65 a ,220/559 1,055/28.80 ,230/5.84 c .370 / 6.86 ,285 / 7.24 D .003/008 .007/0.18 E 117/2.97 137/3.48 F .572/14.53 G .130/3.30 H .245/6.22 ,255/6-48 .

2N5945 : .

2N5946 : 2N5944 (SILICON) 2N5945 2N5946 The RF Line NPN SILICON RF POWER TRANSISTORS . designed for 7.0 to 15 Volts, UHF large signal amplifier applications required in industrial and commercial FM equipment operating in the 400 to 960 MHz range. • Specified 12.5 Volt, 470 MHz Characteristics- Power Output = 2 0 W 2N5944 4.0 W -- 2N5945 10 W - 2N5946 Minimum Gain = 9.0 dB - 2N5944 8.0 dB - 2N5945 6.0 dB - 2N5946 Efficiency = 60% Minimum • RF ballasting provides protection against device damage due to load mismatch • Characterized with series equivalent large-signal Impedance parameters 2.0,4,0, 10 W - 470 MHz RF POWER TRANSISTORS NPN SILICON MAXIMUM RATINGS Rating LSymbol 2N5944i 2N 5945 2N5946 U.

2N5946 : www.DataSheet4U.com .

2N5947 : 2N5947 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation Tc = 25°C Derate above 25°C Storage Temperature Symbol VCEO VCBO v EBO ic PD Tstg Value 30 40 3.5 400 5.0 28.6 -65 to +200 Unit Vdc Vdc Vdc mAdc Watts mW/°C °C CASE 244A-01, STYLE 1 TO-117 (TO-232AA) HIGH FREQUENCY TRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage (Ic = 20 mAdc, Ib = 0) Collector-Base Breakdown Voltage (Ic = 100 /uAdc, lg = 0) Emitter-Base Breakdown Voltage (lg .= 100 /*Adc, cl = 0) Collector Cutoff Current .

2N5949 : The CENTRAL SEMICONDUCTOR 2N5949 Series devices are silicon N-Channel JFETs designed for switching, RF amplifier and mixer applications where low capacitance is desired. MARKING: FULL PART NUMBER TO-92-18R CASE MAXIMUM RATINGS: (TA=25°C) Gate-Source Voltage Drain-Gate Voltage Gate Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VGS VDG IG PD TJ, Tstg 30 30 10 360 -65 to +150 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N5949 2N5951 SYMBOL TEST CONDITIONS MIN MAX MIN MAX IGSS VGS=15V, VDS=0 - 1.0 - 1.0 IGSS VGS=15V, VDS=0, TA=100°C - 200 - 200 IDSS VDS=15V, VGS=0 12 18 7.0 13 BVGSS IG=1.0μA 30 - 30 - VGS VDS=15V, ID=1.2mA.




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