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SMS2301 Datasheet PDF


Part Number SMS2301
Manufacturer SeCoS
Title P-Channel Enhancement Mode Power MOSFET
Description The SMS2301 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide Excellent RDS(ON) and gate charge for mo...
Features Advanced High Cell Density Trench Technology Super low Gate Charge Green Device Available MARKING S1 PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch SOT-23 A L 3 Top View C B 1 1 2 K E 3 2 D F G H J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.10 2.95 1.20 1....

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SMS2001-C : The SMS2001-C is the highest performance trench P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications. The SMS2001-C meet the RoHS and Green Product requirement with full function reliability approved. K FEATURES Advanced High Cell Density Trench Technology Super Low Gate Charge F SOT-23 A L 3 Top View CB 1 1 2 E D G H 3 2 J MARKING 2001 PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch ORDER INFORMATION Part Number Type SMS2001-C Lead (Pb)-free and Halogen-free REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.10 2.95 1.20 1.7 0.89 1.3 1.70 2.3 0.

SMS2002-C : The SMS2002-C is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The SMS2002-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Reliable and Rugged Green Device Available ESD Protection MARKING 2002 PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch ORDER INFORMATION Part Number Type SMS2002-C Lead (Pb)-free and Halogen-free SOT-23 A L 3 Top View CB 1 1 2 K E D F G H 3 2 J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.10 2.95 1.20 1.7 0.89 1.3 1.70 2.3 0.30 0.50 RE.

SMS2009E-C : The SMS2009E-C is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. FEATURES Reliable and Rugged Green Device Available ESD Protection MARKING W28 = Date Code PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch SOT-23 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.10 3.00 1.20 1.80 0.89 1.3 1.70 2.3 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.18 0.55 REF. 0.08 0.26 0.6 REF. 0.95 BSC. ORDER INFORMATION Part Number Type SMS2009E-C Lead (Pb.

SMS201 : The SMS201 is a silicon Schottky diode in a molded plastic DFN package. It is designed for a broadband zero bias detector. It has a high cutoff frequency and can be used beyond 26.5 GHz for power detection up to 10 dBm. Rev. V1 Case 0503 - Molded Plastic DFN Package Electrical Specifications: TA = +25°C Parameter Test Conditions Units Min. Breakdown Voltage (VB) IR = 100 µA V1 Forward Voltage (VF) IF = 100 µA mV 60 Total Capacitance (CT) VR = 0 V, 6 - 8 GHz pF — Video Resistance (RV) IF = 50 mA Ω 2000 Tangential Signal Sensitivity (TSS) NF -3 dB, 10 GHz dBm — Voltage Sensitivity (y) PIN = -30 dBm, Video BW = 500 KHz, 10 GHz mV/mW — Typ. — 80 0.

SMS2012-C : The SMS2012-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications. The SMS2012-C meet the RoHS and Green Product Requirement with full function reliability approved. SOT-23 FEATURES  Advanced High Cell Density Trench Technology  Super Low Gate Charge  Green Device Available MARKING 2012 F  = Date code PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch ORDER INFORMATION Part Number Type SMS2012-C Lead (Pb)-free and Halogen-free MAXIMUM RATINGS Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C.

SMS202 : The SMS202 is a silicon Schottky diode in a molded plastic DFN package. It is designed for a broadband zero bias detector. It has a high cutoff frequency and can be used up to 18 GHz and power detection up to 10 dBm. Rev. V1 Case 0503 - Molded Plastic DFN Package Electrical Specifications: TA = +25°C Parameter Test Conditions Units Min. Breakdown Voltage (VB) IR = 100 µA V1 Forward Voltage (VF) IF = 100 µA mV 60 Total Capacitance (CT) VR = 0 V, 1 MHz pF — Video Resistance (RV) Zero Bias Ω 2000 Tangential Signal Sensitivity (TSS) NF -3 dB, 10 GHz dBm — Voltage Sensitivity (y) PIN = -30 dBm, Video BW = 500 KHz, 10 GHz mV/mW — Typ. — 80 0.17 4000.

SMS202 : 2 (0503) Molded Plastic DFN Package Features The SMS202 is a silicon Schottky diode in a molded plastic DFN package. It is designed for a broadband zero bias detector. It can be used up to 18 GHz and power detection up to 10 dBm. • Small footprint, only 50 X 30 mils. • Simplest broadband detector as no dc bias required. • Very low barrier height, good sensitivity, -54 dBm typical. Also low flick noise. • Very low parasitic package inductance and low package capacitance. • Cost effective choice for high volume production. Maximum Ratings RATING VR IF PDISSr TJ TSTG TSOLDER ESD LIMITS 1.0 20 100 de-rated to zero at 150°C +175 -65 to +150 +260 oC per JEDEC J-STD-20C. Class 0 (Human Body Mo.

SMS2020 : The SMS2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. 1 SOT-23 A 3 3 L Top View 2 C B 1 2 MECHANICAL DATA     K E D Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage F REF. G Millimeter Min. Max. 2.70 3.04 2.10 2.80 1.20 1.60 0.89 1.40 1.78 2.04 0.30 0.50 H REF. G H J K L Millimeter Min. Max. 0.18 0.40 0.60 0.08 0.20 0.6 REF. 0.85 1.15 J APPLICATION   DC-DC converter circuit Load Switch A B C D E F DEVICE MARKING: W28  = Date .

SMS2301-C : The SMS2301-C is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide Excellent RDS(ON) and gate charge for most of the small power switching and load switch applications. The SMS2301-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES  Advanced High Cell Density Trench Technology  Super low Gate Charge  Green Device Available MARKING S1 PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch  ORDER INFORMATION Part Number Type  SMS2301-C Lead (Pb)-free and Halogen-free SOT-23 REF. A B C D E F Millimeter Min. Max. 2.65 3.10 2.10 3.00 1.10 1.80 0.89 1.40 1.70 2.30 0.28 0.55 REF. G H J .

SMS2301Y-C : The SMS2301Y-C is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide Excellent RDS(ON) and gate charge for most of the small power switching and load switch applications. The SMS2301Y-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced High Cell Density Trench Technology Super low Gate Charge Green Device Available MARKING S1. PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch ORDER INFORMATION Part Number Type SMS2301Y-C Lead (Pb)-free and Halogen-free SOT-23 A L 3 Top View C B 1 1 2 K E 3 2 D F G H J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.10 2.95 1.20 .

SMS2303-C : The SMS2303-C is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications. The SMS2303-C meet the RoHS and Green Product requirement with full function reliability approved. SOT-23 FEATURES  Advanced high cell density Trench technology  Super Low Gate Charge  Green Device Available MARKING S3 PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch ORDER INFORMATION Part Number Type SMS2303-C Lead (Pb)-free and Halogen-free REF. A B C D E F Millimeter Min. Max. 2.65 3.10 2.10 3.00 1.10 1.80 0.89 1.40 1.70 2.30 0.30 0.55 REF. G H J K L Mi.

SMS2305R : The device uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for the use as a load switch or in PWM applications. FEATURES High power and current handing capability Lead free product is available Surface mount package SOT-23 A L 3 Top View CB 12 KE 1 D F GH 3 2 J APPLICATIONS PWM applications Load switch Power management REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.10 2.95 1.20 1.7 0.89 1.3 1.70 2.3 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.01 0.18 0.5 Typ. 0.08 0.20 0.6 REF. 0.95 BSC. MARKING 2305 PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch 1 3.

SMS2310 : Elektronische Bauelemente SMS2310 3A, 60V, RDS(ON) 105m N-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage APPLICATION  Battery Switch  DC/DC Converter MARKING S10 PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7’ inch SOT-23 A L 3 Top View CB 12 KE 1 3 2 D F GH J REF. A B C D E F Millimeter Min. Max. 2.70 3.04 2.10 2.80 1.20 1.60 0.89 1.40 1.78 2.04 0.30 0.50 REF. G H J K L Millimeter Min. Max. - 0.18 0.40 0.60 0.08 0.20 0.6 REF. 0.85 1.15 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless o.

SMS2312 : The SMS2312 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-23 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. FEATURES Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING S12 PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch SOT-23 A L 3 Top View CB 1 1 2 K E 3 2 D F G H J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.10 2.95 1.20 1.7 0.89 1.3 1.70 2.3 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.18 0.55 REF. 0.0.

SMS2321 : Elektronische Bauelemente SMS2321 -2.9A, -20V, RDS(ON) 57 mΩ P-Channel Enhancement MOSFET FEATURES TrenchFET power MOSFET APPLICATIONS PA switch Load switch MARKING S21 PACKAGE INFORMATION Package MPQ SOT-23 3K RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free Leader Size 7 inch SOT-23 A L 3 Top View CB 12 KE 1 3 2 D F GH J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.10 2.65 1.20 1.40 0.89 1.17 1.78 2.04 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.09 0.18 0.35 0.65 0.08 0.20 0.6 REF. 0.95 BSC. 1 3 2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage Continuous Gate-Source Voltage Continuou.

SMS2333 : The SMS2333 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-23 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. FEATURES Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING S33 SOT-23 A L 3 Top View CB 12 KE 1 3 2 D F GH J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.10 2.65 1.20 1.40 0.89 1.17 1.78 2.04 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.09 0.18 0.35 0.65 0.08 0.20 0.6 REF. 0.95 BSC. PACKAGE INFORMATION Package MPQ SOT-23 3K Leade.




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