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2N7002DWS Datasheet PDF


Part Number 2N7002DWS
Manufacturer DIODES
Title DUAL N-CHANNEL MOSFET
Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high ef...
Features and Benefits
 Low On-Resistance
 Low Input Capacitance
 Fast Switching Speed
 Low Input/Output Leakage
 ESD Protected
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 For automotive applications requiring specific change control (i....

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2N7002DW : and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.  Motor Control  Power Management Functions 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e.: parts qualified.

2N7002DW : Field Effect Transistor N-Channel, Enhancement Mode 2N7002DW Features • Dual N−Channel MOSFET • Low On−Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra−Small Surface Mount Package • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com 1 SC−88/SC70−6/SOT−363 CASE 419B−02 MARKING DIAGRAM ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Units VDSS Drain−Source Voltage 60 V VDGR Drain−Gate Voltage (RGS ≤ 1.0 MW) 60 V VGSS Gate−Source Voltage Continuous ±20 V Pulsed ±40 ID Drain Current Continuous 115 mA Continuous 73 at 100°C P.

2N7002DW : JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETs 2N7002DW V(BR)DSS 60 V Dual N-channel MOSFET RDS(on)MAX  5Ω@10V  7Ω@5V   FEATURE z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability ID 115mA SOT-363 6 5 4  1 2 3 APPLICATION z Load Switch for Portable Devices z DC/DC Converter MARKING Equivalent Circuit MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VDS Drain-Source voltage 60 VGS ID Gate-Source voltage Drain Current ±20 115 PD Power Dissipation 150 RӨJA Thermal Resistance from Junction to Ambient 833 TJ Junction T.

2N7002DW : 2N7002DW Features • High Density Cell Design For Low RDS(ON) • Voltage Controlled Small Signal Switch • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Halogen Free. “Green” Device (Note1) • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) DUAL N-CHANNEL MOSFET Maximum Ratings • Operating Junction Temperature Range : -55°C to +150°C • Storage Temperature Range: -55°C to +150°C • Thermal Resistance:415°C/W Junction to Ambient(Steady-State)(Note2) Parameter Drain-Source Voltage Gate-Source Volltage TA=25°C Continuous Drain Current TA=100°C Pulsed Drain Current(Note3) Total Power Dissipation(Note4) Symbol VDS VGS I.

2N7002DW : 2N7002DW Dual N-Channel MOSFET 3 2 1 6 5 4 Features: *Low On-Resistance : 7.5 Ω *Low Input Capacitance: 22PF *Low Out put Capacitance : 11PF *Low Threshole :1 .5V(TYE) *Fast Switching Speed : 11ns 1 2 3 4 5 6 SOT-363(SC-88) Mechanical Data: *Case: SOT-363, Molded Plastic *Case Material-UL Flammability Rating 94V-0 *Terminals: Solderable per MIL-STD-202, Method 208 *Weight: 0.006 grams(approx.) Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Drain-Gate Voltage R GS 1.0M Ω _ Gate-Source Voltage Continuous Drain Current (TA=25 C) Power Dissipation (TA=25 C) Maximax Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDS VDGR .

2N7002DW : 2N7002DW — N-Channel Enhancement Mode Field Effect Transistor January 2015 2N7002DW N-Channel Enhancement Mode Field Effect Transistor Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant SC70-6 (SOT 363) D2 G1 S1 1 Marking : 2N Ordering Information Part Number 2N7002DW Top Mark 2N 1 S2 G2 D1 Package SC70 6L Packing Method Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions an.

2N7002DW : OptiMOS™ Small-Signal-Transistor Features • Dual N-channel • Enhancement mode • Logic level • Avalanche rated • Fast switching • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21 2N7002DW Product Summary VDS RDS(on),max ID VGS=10 V VGS=4.5 V 60 V 3W 4 0.3 A PG-SOT363 65 4 1 2 3 Type Package Tape and Reel Information 2N7002DW PG-SOT363 H6327: 3000 pcs/reel Marking X8s HalogenFree Packing Yes Non Dry Parameter 1) Continuous drain current Pulsed drain current Symbol Conditions I D T A=25 °C T A=70 °C I D,pulse T A=25 °C Value 0.30 0.24 1.2 Unit A Avalanche energy, single pulse E AS I D=0.3 A, R GS=25 W Reverse diode dv.

2N7002DW : The UTC 2N7002DW uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Signal Switch * Rugged and Reliable * High Saturation Current Capability  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Package 2N7002DWG-AL6-R SOT-363 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123456 S1 G1 D2 S2 G2 D1 Packing Tape Reel  MARKING 3PG www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-534.D 2N7002DW Power MOSFET  ABSOL.

2N7002DWA : This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications  DC-DC Converters  Power Management Functions  Battery Operated Systems and Solid-State Relays  Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Small Surface Mount Package  HBM Class 1C  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The 2N7002DWAQ is s.




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