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A5G19H605W19N Datasheet PDF


Part Number A5G19H605W19N
Manufacturer NXP
Title Airfast RF Power GaN Transistor
Description This 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwi...
Features and benefits
• High terminal impedances for optimal broadband performance
• Advanced high performance in-package Doherty
• Improved linearized error vector magnitude with next generation signal
• Able to withstand extremely high output VSWR and broadband operating conditions
• Plastic package 3 Typ...

File Size 485.05KB
Datasheet A5G19H605W19N PDF File








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