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TTA003


Part Number TTA003
Manufacturer Toshiba
Title Silicon PNP Epitaxial Type Bipolar Transistors
Description Bipolar Transistors Silicon PNP Epitaxial Type TTA003 1. Applications • Power Amplifiers • Power Switching 2. Features (1) Low collector saturatio...
Features (1) Low collector saturation voltage: VCE(sat) = -0.5 V (max) (IC = -1 A, IB = -100 mA) (2) High-speed switching: tstg = 300 ns (typ.) 3. Packaging and Internal Circuit TTA003 1. Base 2. Collector (Heatsink) 3. Emitter New PW-Mold 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T...

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TTA0001 : ·Low Collector Saturation Voltage ·Good Linearity of hFE ·Complement to Type TTC0001 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -18 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -9 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ TTA0001 isc .

TTA0001 : TOSHIBA Transistor Silicon PNP Triple Diffused Type TTA0001 ○ Power Amplifier Applications • High collector voltage: VCEO = -160 V (min.) • Complementary to TTC0001 • Recommended for 100-W high-fidelity audio frequency amplifier output stage. TTA0001 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse VCBO VCEO VEBO IC ICP IB PC Tj Tstg -160 V -160 V -5 V -18 A -35 A -9 A 150 W 150 °C −55 to 150 °C 1.BASE 2.COLLECTOR(HEAT SINK) 3.EMITTER JEDEC ― JEITA.

TTA0002 : ·Low Collector Saturation Voltage ·Good Linearity of hFE ·Complement to Type TTC0002 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -18 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -9 A 180 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ TTA0002 isc .

TTA0002 : TOSHIBA Transistor Silicon PNP Triple Diffused Type TTA0002 ○ Power Amplifier Applications • High collector voltage: VCEO = -160 V (min) • Complementary to TTC0002 • Recommended for 100-W high-fidelity audio frequency amplifier output stage. TTA0002 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating Unit -160 V -160 V -5 V -18 A -35 A -9 A 180 W 150 °C −55 to 150 °C JEDEC ― JEITA ― TOSHIBA 2-21F1A Weight: 9.75 .

TTA004 : TOSHIBA Transistor Silicon PNP Epitaxial Type TTA004 ○ Audio Frequency Amplifier Applications • High collector voltage : VCEO = -160 V (min) • Complementary to TTC004 • Small collector output capacitance : Cob = 17pF (typ.) • High transition frequency : fT = 100MHz (typ.) TTA004 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC ICP IB PC PC Tj Tstg Rating -160 -160 -6 -1.5 -2.5 -0.5 1.5 10 150 -55 to 150 Unit V V V A A A W W °C °C .

TTA004B : Bipolar Transistors Silicon PNP Epitaxial Type TTA004B 1. Applications • Audio-Frequency Amplifiers 2. Features (1) High collector voltage: VCEO = -160 V (min) (2) Complementary to TTC004B (3) Small collector output capacitance: Cob = 17 pF (typ.) (4) High transition frequency: fT = 100 MHz (typ.) 3. Packaging and Internal Circuit (Note) TTA004B 1. Emitter 2. Collector 3. Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to electrical isolation from surrounding parts. ©2016 Toshiba Corporation 1 Start of commerc.

TTA005 : Bipolar Transistors Silicon PNP Epitaxial Type TTA005 TTA005 1. Applications • High-Speed Switching • DC-DC Converters 2. Features (1) High DC current gain: hFE = 200 to 500 (IC = -0.5 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.27 V (max) (IC = -1.6 A, IB = -53 mA) (3) High-speed switching: tf = 55 ns (typ.) 3. Packaging and Internal Circuit 1. Base 2. Collector (Heatsink) 3. Emitter New PW-Mold 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 Emitter-base voltage Collector current (DC) VEBO -7 (Note 1) IC -5 A Collector .

TTA006B : Bipolar Transistors Silicon PNP Epitaxial Type TTA006B 1. Applications • Power Amplifiers • Audio-Frequency Amplifiers 2. Features (1) High collector voltage (2) Small collector output capacitance (3) High transition frequency (4) Complementary to TTC011B : VCEO = -230 V (min) : Cob = 30 pF (typ.) : fT = 70 MHz (typ.) 3. Packaging and Internal Circuit (Note) TTA006B 1. Emitter 2. Collector 3. Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to electrical isolation from surrounding parts. 4. Absolute Maximum .

TTA007 : TOSHIBA Transistor Silicon PNP Epitaxial Type TTA007 TTA007 High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain : hFE = 200 to 500 (IC = −0.1 A) • Low collector-emitter saturation voltage : VCE(sat) = −0.2 V (max) • High-speed switching : tf = 70 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −7 V Collector current DC IC Pulse ICP −1 A −2 Base current IB −0.1 A t = 10 s PC Collector power dissipation 1.1 W DC (Note 1) 0.7 Junction temperature Tj 150 °C Storage temperature range.

TTA008B : Bipolar Transistors Silicon PNP Epitaxial Type TTA008B 1. Applications • Power Amplifiers • Power Switching 2. Features (1) High DC current gain : hFE = 100 to 200 (IC = -0.5 A) (2) Low collector emitter saturation voltage : VCE(sat) = -0.5 V (max) (IC = -1A) (3) High-speed switching : tstg = 300 ns (typ.) (IC = -1A) (4) Complementary to TTC015B 3. Packaging and Internal Circuit (Note) TTA008B 1. Emitter 2. Collector 3. Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to electrical isolation from surround.

TTA009 : Bipolar Transistors Silicon PNP Epitaxial Type TTA009 1. Applications • Power Amplifiers • Power Switching 2. Features (1) Low collector saturation voltage : VCE(sat) = -0.5 V (max) (IC = -1 A, IB = -100 mA) (2) High-speed switching : tstg = 300 ns (typ.) (IC = -1 A) 3. Packaging and Internal Circuit TTA009 New PW-Mold 1. Base 2. Collector (Heatsink) 3. Emitter Start of commercial production 2015-04 1 2015-06-19 Rev.1.0 TTA009 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -7 Collector current (DC) (Not.




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