GTRB264318FC |
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| Part Number | GTRB264318FC |
| Manufacturer | MACOM |
| Description | The GTRB264318FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features internal matching, high efficienc... |
| Features |
internal matching, high efficiency, and a thermally-enhanced package with earless flange.
Package Types: H-37248KC-6/2
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up
VCC = 48 V, IDQ = 150 mA,
VGS(PEAK) = –5.6 V, ƒ = 2690 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 20 60 Gain 16 45 12 8 4 30 30 Efficiency 15 PAR @ 0.01% CCDF 35 40 45 gt r b264318f c- par 1 0 50 Average Output Power (dBm) Features • GaN on SiC HEMT technology • Broadband Internal matching • Typical pulsed CW performance: 10 µs pulse width, 10% duty cycle, 2675 MHz, 48 V, D... |
| Datasheet |
 GTRB264318FC Data Sheet
PDF 520.53KB |
| Distributor | Stock | Price | Buy |
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MACOM |
Thermally-Enhanced High Power RF GaN on SiC HEMT |
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MACOM |
Thermally-Enhanced High Power RF GaN on SiC HEMT |
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MACOM |
Thermally-Enhanced High Power RF GaN on SiC HEMT |
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MACOM |
Thermally-Enhanced High Power RF GaN on SiC HEMT |
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MACOM |
Thermally-Enhanced High Power RF GaN on SiC HEMT |
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MACOM |
Thermally-Enhanced High Power RF GaN on SiC HEMT |
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ADOS |
Gastransmitter |
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Wolfspeed |
Thermally-Enhanced High Power RF GaN on SiC HEMT |
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Wolfspeed |
Thermally-Enhanced High Power RF GaN on SiC HEMT |
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Wolfspeed |
Thermally-Enhanced High Power RF GaN on SiC HEMT |
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Wolfspeed |
Thermally-Enhanced High Power RF GaN on SiC HEMT |
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Wolfspeed |
Thermally-Enhanced High Power RF GaN on SiC HEMT |
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