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RN2106 Datasheet PDF

Toshiba
Part Number RN2106
Manufacturer Toshiba
Title Silicon PNP Epitaxial Type Transistors
Description RN2101 to RN2106 Bipolar Transistors Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2101/02/03/04/05/06 1. Applicat...
Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide range of resistance to accommodate various circuit...

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RN2101 : RN2101 to RN2106 Bipolar Transistors Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2101/02/03/04/05/06 1. Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (4) Complementary to RN1101 to RN1106 3. Equivalent Circuit 4. Bias Resistor Values Part No. RN2101 RN2102 RN2103 RN2104 RN2105 RN2106 R1 (kΩ) 4.7 10 22 47 2.2 4.

RN2101MFV : RN2101MFV to RN2106MFV Bipolar Transistors Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2101MFV/02MFV/03MFV/04MFV/05MFV/06MFV 1. Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Ultra-small package, suited to very high density mounting (3) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (4) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (5) Complementary to RN1101MFV to RN1106MFV 3. Equivalent Circuit 4. Bias Re.

RN2102 : RN2101 to RN2106 Bipolar Transistors Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2101/02/03/04/05/06 1. Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (4) Complementary to RN1101 to RN1106 3. Equivalent Circuit 4. Bias Resistor Values Part No. RN2101 RN2102 RN2103 RN2104 RN2105 RN2106 R1 (kΩ) 4.7 10 22 47 2.2 4.

RN2102MFV : RN2101MFV to RN2106MFV Bipolar Transistors Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2101MFV/02MFV/03MFV/04MFV/05MFV/06MFV 1. Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Ultra-small package, suited to very high density mounting (3) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (4) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (5) Complementary to RN1101MFV to RN1106MFV 3. Equivalent Circuit 4. Bias Re.

RN2103 : RN2101 to RN2106 Bipolar Transistors Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2101/02/03/04/05/06 1. Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (4) Complementary to RN1101 to RN1106 3. Equivalent Circuit 4. Bias Resistor Values Part No. RN2101 RN2102 RN2103 RN2104 RN2105 RN2106 R1 (kΩ) 4.7 10 22 47 2.2 4.

RN2103MFV : RN2101MFV to RN2106MFV Bipolar Transistors Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2101MFV/02MFV/03MFV/04MFV/05MFV/06MFV 1. Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Ultra-small package, suited to very high density mounting (3) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (4) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (5) Complementary to RN1101MFV to RN1106MFV 3. Equivalent Circuit 4. Bias Re.

RN2104 : RN2101 to RN2106 Bipolar Transistors Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2101/02/03/04/05/06 1. Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (4) Complementary to RN1101 to RN1106 3. Equivalent Circuit 4. Bias Resistor Values Part No. RN2101 RN2102 RN2103 RN2104 RN2105 RN2106 R1 (kΩ) 4.7 10 22 47 2.2 4.

RN2104MFV : RN2101MFV to RN2106MFV Bipolar Transistors Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2101MFV/02MFV/03MFV/04MFV/05MFV/06MFV 1. Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Ultra-small package, suited to very high density mounting (3) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (4) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (5) Complementary to RN1101MFV to RN1106MFV 3. Equivalent Circuit 4. Bias Re.

RN2105 : RN2101 to RN2106 Bipolar Transistors Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2101/02/03/04/05/06 1. Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (4) Complementary to RN1101 to RN1106 3. Equivalent Circuit 4. Bias Resistor Values Part No. RN2101 RN2102 RN2103 RN2104 RN2105 RN2106 R1 (kΩ) 4.7 10 22 47 2.2 4.

RN2105MFV : RN2101MFV to RN2106MFV Bipolar Transistors Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2101MFV/02MFV/03MFV/04MFV/05MFV/06MFV 1. Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Ultra-small package, suited to very high density mounting (3) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (4) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (5) Complementary to RN1101MFV to RN1106MFV 3. Equivalent Circuit 4. Bias Re.

RN2106MFV : RN2101MFV to RN2106MFV Bipolar Transistors Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2101MFV/02MFV/03MFV/04MFV/05MFV/06MFV 1. Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Ultra-small package, suited to very high density mounting (3) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (4) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (5) Complementary to RN1101MFV to RN1106MFV 3. Equivalent Circuit 4. Bias Re.

RN2107 : RN2107 to RN2109 Bipolar Transistors Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2107/08/09 1. Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (4) Complementary to RN1107 to 1109 3. Equivalent Circuit 4. Bias Resistor Values Part No. RN2107 RN2108 RN2109 R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 ©2021 1 Toshiba Elec.

RN2107F : RN2107F~RN2109F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107F,RN2108F,RN2109F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN1107F~RN1109F Unit in mm Equivalent Circuit and Bias Resister Values Type No. RN2107F RN2108F RN2109F R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 JEDEC EIAJ TOSHIBA Weight: 2.3 mg Symbol RN2107F ~RN2109F RN2107F Emitter-base voltage RN2108F RN2109F Collector current Collector power dissipation Junction temperature Storage temperature range RN2107F ~RN2109F IC PC Tj Tstg VEBO VCBO VCEO Rati.

RN2107MFV : RN2107MFV to RN2109MFV Bipolar Transistors Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2107MFV/08MFV/09MFV 1. Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Ultra-small package, suited to very high density mounting (3) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (4) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (5) Complementary to RN1107MFV to 1109MFV 3. Equivalent Circuit 4. Bias Resistor Values Part N.

RN2108 : RN2107 to RN2109 Bipolar Transistors Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2107/08/09 1. Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (4) Complementary to RN1107 to 1109 3. Equivalent Circuit 4. Bias Resistor Values Part No. RN2107 RN2108 RN2109 R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 ©2021 1 Toshiba Elec.

RN2108F : RN2107F~RN2109F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2107F,RN2108F,RN2109F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN1107F~RN1109F Unit in mm Equivalent Circuit and Bias Resister Values Type No. RN2107F RN2108F RN2109F R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 JEDEC EIAJ TOSHIBA Weight: 2.3 mg Symbol RN2107F ~RN2109F RN2107F Emitter-base voltage RN2108F RN2109F Collector current Collector power dissipation Junction temperature Storage temperature range RN2107F ~RN2109F IC PC Tj Tstg VEBO VCBO VCEO Rati.




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