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HN2S01FU Datasheet PDF


Part Number HN2S01FU
Manufacturer Toshiba
Title Silicon Epitaxial Schottky Barrier Type Diode
Description TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01FU Low Voltage High Speed Switching Application HN2S01FU Unit: mm z HN2S01FU is comp...
Features ature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and e...

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Datasheet HN2S01FU PDF File








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HN2S01F : TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S01F Low Voltage High Speed Switching Application HN2S01F Unit: mm z HN2S01F is composed of 3 independent diodes. z Low reverse current: VF = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 * mA Average forward current IO 100 * mA Surge current (10ms) IFSM 1* A Power dissipation P 300 mW Junction temperature Tj 125 °C Storage temperature range Operating temperature range Tstg −55 to 125 °C JEDEC Topr −40 to 100 °C JEITA ― SC-74 Note: Using cont.

HN2S02FU : TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S02FU High Speed Switching Application HN2S02FU Unit: mm z HN2S02FU is composed of 3 independent diodes. z Low forward voltage: VF (3) = 0.54V (typ.) z Low reverse current: IR = 5μA (max.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300 * mA Average forward current IO 100 * mA Surge current (10ms) IFSM 1* A Power dissipation P 200 ** mW Junction temperature Tj 125 °C JEDEC ― Storage temperature range Tstg −55 to 125 °C JEITA ― Operating temperature range Topr −40 to .

HN2S02JE : TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S02JE HN2S02JE High-speed Switching Applications z HN2S02JE is composed of two independent diodes. z Low forward voltage: VF (3) = 0.54V (typ.) z Low reverse current: IR = 5μA (max) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300 * mA Average forward current Surge current (10ms) Power dissipation Junction temperature IO IFSM P Tj 100 * mA 1* A 100 ** mW 125 °C 1.ANODE1 2.NC 3.ANODE2 4.CATHODE2 5.CATHODE1 Storage temperature range Tstg −55 to 125 °C Operating temperatu.

HN2S03FU : TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S03FU HN2S03FU High Speed Switching Application Unit: mm z HN2S03FU is composed of 3 independent diodes. z Low forward voltage : VF (3) = 0.50V (typ.) z Low reverse current : IR= 0.5μA (max) z Small total capacitance : CT = 3.9pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 25 V Reverse voltage VR 20 V Maximum (peak) forward current IFM 100 * mA Average forward current IO 50 * mA Surge current (10ms) IFSM 1* A Power dissipation P 200 ** mW Junction temperature Tj 125 °C JEDEC ― Storage temperature range Tstg −55 to 125 °C.

HN2S04FU : TOSHIBA Diode Epitaxial Schottky Barrier Type HN2S04FU HN2S04FU High-Speed Switching Application Unit: mm z The HN2S04FU consists of three separate diodes. z Low forward voltage: VF (3) = 0.36V (typ.) z Low reverse current: IR= 50 μA (max) z Small total capacitance: CT = 46 pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Maximum (peak) reverse Voltage VRM 25 V Reverse voltage VR 20 V Maximum (peak) forward current IFM 450 * mA Average forward current IO 200 * mA Surge current (10 ms) IFSM 1* A Power dissipation P 200 ** mW Junction temperature Tj 125 °C JEDEC ― Storage temperature range Tstg −55 to 125 °C JEITA ― .




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