Part Number HN2S02JE
Manufacturer Toshiba
Title Silicon Epitaxial Schottky Barrier Type Diode
Description TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type HN2S02JE HN2S02JE High-speed Switching Applications z HN2S02JE is composed of two independ...
Features nificantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) a...

File Size 192.42KB
Datasheet HN2S02JE PDF File

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