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2N1890


Part Number 2N1890
Manufacturer Texas Instruments
Title Silicon NPN Transistor
Description OEM: Texas Instruments Transistor 2N720 Datasheet Silicon NPN Transistor 2N720 120V / 1A / 1,5W DATASHEET OEM – Texas Instruments Source: Tex...
Features asheet Rev. 1.3
  – 03/19
  – data without warranty / liability OEM: Texas Instruments Transistor 2N720 Datasheet Datasheet Rev. 1.3
  – 03/19
  – data without warranty / liability OEM: Texas Instruments Transistor 2N720 Datasheet Datasheet Rev. 1.3
  – 03/19
  – data without warranty / liability OEM: ...

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2N1890 : TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/225 Devices 2N1711 2N1890 Qualified Level JAN JANTX MAXIMUM RATINGS Ratings Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Impedance 1) Derate linearly 4.57 mW/0C for TA 250C 2) Derate linearly 17.2 mW/0C for TC 250C Symbol VCBO VEBO IC PT TJ, Tstg Symbol ZθJX 2N1711 2N1890 75 100 7.0 500 0.8 3.0 -65 to +200 Max. 58 ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Collector.

2N1893 : OEM: Texas Instruments Transistor 2N720 Datasheet Silicon NPN Transistor 2N720 120V / 1A / 1,5W DATASHEET OEM – Texas Instruments Source: Texas Instruments Databook 1968/69 Datasheet Rev. 1.3 – 03/19 – data without warranty / liability OEM: Texas Instruments Transistor 2N720 Datasheet Datasheet Rev. 1.3 – 03/19 – data without warranty / liability OEM: Texas Instruments Transistor 2N720 Datasheet Datasheet Rev. 1.3 – 03/19 – data without warranty / liability OEM: Texas Instruments Transistor 2N720 Datasheet Datasheet Rev. 1.3 – 03/19 – data without warranty / liability OEM: Texas Instruments Transistor 2N720 Datasheet Datasheet Rev. 1.3 – 03/19 – data without warranty / l.

2N1893 : 3 2 DESCRIPTION NPN medium power transistor in a TO-39 metal package. 3 MAM317 1 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain Tcase ≤ 25 °C IC = 150 mA; VCE = 10 V open emitter open base CONDITIONS − − − − 40 MIN. MAX. 120 80 1 3 120 UNIT V V A W 1997 Apr 17 2 Philips Semiconductors Product specification NPN medium power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot PARAMETER collector-base voltage collector-emitter voltage emitte.

2N1893 : The 2N1893 is a Silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for use in high-performance amplifier, oscillator and switching circuits. It provides greater voltage swings in oscillator and amplifier circuits and more protection in inductive switching circuits due to its 120 V collector-to-base voltage rating. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCER VCEO VEBO IC Ptot Tstg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (RBE ≤ 10Ω) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Total Dissipation at Tamb ≤ 25 oC at TC ≤ 25 oC at TC ≤ 100 oC Storage Temperature Max. Op.

2N1893 : TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/182 Devices 2N720A 2N1893 2N1893S Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol All Devices Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage (RBE = 10 Ω) Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) VCEO VCBO VEBO VCER IC PT 80 120 7.0 100 500 2N720A 2N1893, S 0.5 0.8 1.8 3.0 Operating & Storage Junction Temperature Range TJ, Tsrg -65 to +200 THERMAL CHARACTERISTICS Characteristics Symbol 2N720A 2N1893, S Thermal Resistance, Junction-to-Case RθJC 97 58 1) Derate linearly 2.86 mW/0C for 2N720A, 4.57 .

2N1893 : Data Sheet No. 2N1893 Type 2N1893 Geometry 4500 Polarity NPN Qual Level: JAN - JANTXV Features: • • • • General-purpose low-power NPN silicon transistor. Housed in TO-5 case. Also available in chip form using the 4500 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/182 which Semicoa meets in all cases. Generic Part Number: 2N1893 REF: MIL-PRF-19500/182 TO -5 Maximum Ratings TC = 25 C unless otherwise specified o Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector - Emitter Voltage, RBE = 10 Ohms Collector Current, Continuous Power Dissipation, TA = 25 C Derate above 25 C Power Dissipation, TC = 25 C Derate above 25 C Operating Juncti.

2N1893 : NPN 2N1893 MEDIUM POWER TRANSISTOR The 2N1893 are NPN transistors mounted in TO-39 metal package. They are intended for use in high performance amplifier, oscillator and switching applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VCER VEBO IC ICM IBM PD TJ TStg Tamb Ratings Collector-Emitter Voltage (IB = 0) Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (RBE = 10 Ω) Emitter-Base Voltage Collector Current Peak Collector Current Peak Base Current Total Power Dissipation Junction Temperature Storage Temperature range operating ambient temperature Value 80 120 100 7 0.5 1 0.2 0.8 Tamb= 25°C Tcase= 25°C 3 Tcase= 100°C 1.7 200 -65 to +150 -65 to +150 Unit .

2N1893 : The CENTRAL SEMICONDUCTOR 2N1893 is a silicon NPN epitaxial planar transistor designed for small signal general purpose switching applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCER Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation (TC=25°C) PD Power Dissipation PD Operating and Storage Junction Temperature TJ, Tstg 120 100 80 7.0 500 3.0 0.8 -65 to +200 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=90V IEBO VEB=5.0V BVCBO IC=100μA 120 BVCER .

2N1893 : This is a silicon NPN transistor in a T0-39 type case designed primarily for amplifier and switching applications. This device features high breakdown voltage, low l­eakage current, low capacity, and beta useful over an extremely wide current range. Absolute Maximum Ratings: Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Continuous Collector Current, lC Total Device Dissipation (TA= +25°C), PD Derate above 25°C Total Device Dissipation (TC = +25°C), PD Derate above 25°C Operating Junction Temperature Range, TJ Storage Temperature Range, Tstg Thermal Resistance, Junction-to-Case, RthJC Thermal Resistance, Junction-to-Ambient, RthJA Lead T.

2N1893 : Collector Emitter Voltage Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total DeviceDissipation @ Ta=25ºC Derate Above 25ºC Total Deivice Dissipation@ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Ambient Junction to Case SYMBOL VCEO VCER VCBO VEBO IC PD PD Tj, Tstg Rth(j-a) Rth(j-c) VALUE 80 100 120 7.0 0.5 0.8 4.57 3.0 17.2 -65 to +200 219 58.3 UNITS V V V V A W mW/ºC W mW/ºC ºC ºC/W ºC/W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Breakdown Voltage BVCER(sus) IC=100mA,RBE =10Ω Collector Emitter Sus.

2N1893 : 2N1893 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. (00.0.8395)max. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2 13 45° 2.54 (0.100) 1 – Emitter TO39 (TO205AD) PINOUTS 2 – Base 3 – Collector Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. VCEO = 80V IC = 0.5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications Parameter VCEO* IC(CONT) hFE ft PD Test Conditions @ 5/1m (VCE / IC) * Maximum Working Voltage Min..

2N1893 : 2N1711 For Specifications, See 2N718A Data. 2N1893 CASE 79, STYLE 1 TO-39 (TO-205AD) GENERAL PURPOSE TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous - @Total Device Dissipation Ta = 25°C Derate above 25°C Total Device Dissipation (S Tq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol v CEO VCER VCBO VEBO ic PD pd Tj, Tstg Value 80 100 120 7.0 0.5 0.8 4.57 3.0 17.2 - 65 to + 200 Unit Vdc Vdc Vdc Vdc Adc Watt mW/°C Watts mW/°C °C Refer to 2N3019 for graphs. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case .

2N1893S : Data Sheet No. 2N1893S Type 2N1893S Geometry 4500 Polarity NPN Qual Level: JAN - JANTXV Features: • • • • General-purpose low-power NPN silicon transistor. Housed in TO-39 case. Also available in chip form using the 4500 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/182 which Semicoa meets in all cases. Generic Part Number: 2N1893 REF: MIL-PRF-19500/182 TO-39 Maximum Ratings TC = 25 C unless otherwise specified o Rating Collector-Emitter voltage Collector-Base Voltage Emitter-Base Voltage Collector - Emitter Voltage, RBE = 10 Ohms Collector Current, Continuous Power Dissipation, TA = 25 C Derate above 25 C Power Dissipation, TC = 25 C Derate above 25 C Operating Jun.

2N1893S : TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/182 Devices 2N720A 2N1893 2N1893S Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol All Devices Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage (RBE = 10 Ω) Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) VCEO VCBO VEBO VCER IC PT 80 120 7.0 100 500 2N720A 2N1893, S 0.5 0.8 1.8 3.0 Operating & Storage Junction Temperature Range TJ, Tsrg -65 to +200 THERMAL CHARACTERISTICS Characteristics Symbol 2N720A 2N1893, S Thermal Resistance, Junction-to-Case RθJC 97 58 1) Derate linearly 2.86 mW/0C for 2N720A, 4.57 .




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