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IRF422


Part Number IRF422
Manufacturer ART CHIP
Title N-Channel Power MOSFET
Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, co...
Features e, refer to Section 7. ID at Tc=100¥ 1.5A 1.5A 1.0A 1.0A 1.5A 1.5A 1.0A 1.0A 2.0A 2.0A Case Style TO-204AA TO-220AB www.artschip.com 1 IRF420-423/IRF820-823 MTP2N45/2N50 N-Channel Power MOSFETs 3.0A, 450V/500V Maximum Ratings Symbol Characteristic VDSS VDGR VGS TJ, Tstg TL Drain to Source...

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IRF420 : These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. z Low RDS(on) z VGS Rated at ±20V z Silicon Gate for Fast Switching Speeds z IDSS, VDS(on), Specified at Elevated Temperature z Rugged z Low Drive Requirements z Ease of Paralleling TO-204AA IRF420 IRF421 IRF422 IRF423 TO-220AB IRF820 IRF821 IRF822 IRF823 MTP2N45 MTP2N50 Product Summary Part Number VDSS RDS(on) ID at Tc=25¥ IRF420 500V 3.0 Ω 2.5A IRF421 450V 3.0 Ω 2.5A IRF422 500V 4.0 Ω 2.0A IRF423 450V 4.0 Ω 2.0A IRF820 500V 3.0 Ω 2..

IRF420 : ·silicon Gate for fast switching at elevate ·rugged ·low drive requirements ·ease of paralleling APPLICATIONS ·high speed applications such as Switching power supplies,AC and DCmotor controls relay and solenoid driver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 500 ±20 V V Drain Current-continuous@ TC=25℃ 2.5 A Total Dissipation@TC=25℃ 50 W Max. Operating Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 30 ℃/W isc web.

IRF420 : .

IRF420 : These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17405. July 1998 Features • 2.2A and 2.5A, 450V and 500V • rDS(ON) = 3.0Ω and 4.0Ω • SOA is Power Dissipation Limited • Nanosecond.

IRF420 : .

IRF420-423 : .

IRF421 : These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. z Low RDS(on) z VGS Rated at ±20V z Silicon Gate for Fast Switching Speeds z IDSS, VDS(on), Specified at Elevated Temperature z Rugged z Low Drive Requirements z Ease of Paralleling TO-204AA IRF420 IRF421 IRF422 IRF423 TO-220AB IRF820 IRF821 IRF822 IRF823 MTP2N45 MTP2N50 Product Summary Part Number VDSS RDS(on) ID at Tc=25¥ IRF420 500V 3.0 Ω 2.5A IRF421 450V 3.0 Ω 2.5A IRF422 500V 4.0 Ω 2.0A IRF423 450V 4.0 Ω 2.0A IRF820 500V 3.0 Ω 2..

IRF421 : ·silicon Gate for fast switching at elevate ·rugged ·low drive requirements ·ease of paralleling APPLICATIONS ·high speed applications such as Switching power supplies,AC and DCmotor controls relay and solenoid driver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 450 ±20 V V Drain Current-continuous@ TC=25℃ 2.5 A Total Dissipation@TC=25℃ 50 W Max. Operating Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 30 ℃/W isc web.

IRF421 : .

IRF421 : .

IRF421 : These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17405. July 1998 Features • 2.2A and 2.5A, 450V and 500V • rDS(ON) = 3.0Ω and 4.0Ω • SOA is Power Dissipation Limited • Nanosecond.

IRF422 : ·silicon Gate for fast switching at elevate ·rugged ·low drive requirements ·ease of paralleling APPLICATIONS ·high speed applications such as Switching power supplies,AC and DCmotor controls relay and solenoid driver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 500 ±20 V V Drain Current-continuous@ TC=25℃ 2.2 A Total Dissipation@TC=25℃ 50 W Max. Operating Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 30 ℃/W isc web.

IRF422 : .

IRF422 : .

IRF422 : These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17405. July 1998 Features • 2.2A and 2.5A, 450V and 500V • rDS(ON) = 3.0Ω and 4.0Ω • SOA is Power Dissipation Limited • Nanosecond.

IRF423 : These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. z Low RDS(on) z VGS Rated at ±20V z Silicon Gate for Fast Switching Speeds z IDSS, VDS(on), Specified at Elevated Temperature z Rugged z Low Drive Requirements z Ease of Paralleling TO-204AA IRF420 IRF421 IRF422 IRF423 TO-220AB IRF820 IRF821 IRF822 IRF823 MTP2N45 MTP2N50 Product Summary Part Number VDSS RDS(on) ID at Tc=25¥ IRF420 500V 3.0 Ω 2.5A IRF421 450V 3.0 Ω 2.5A IRF422 500V 4.0 Ω 2.0A IRF423 450V 4.0 Ω 2.0A IRF820 500V 3.0 Ω 2..




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