2SC5658-C Datasheet

2SC5658-C NPN Plastic Encapsulated Transistor

Elektronische Bauelemente 2SC5658-C 0.15A , 60V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE Low Current (Max. 150mA) Low Voltage CLASSIFICATION OF hFE Product-Rank 2SC5658-Q-C 2SC5658-R-C 2SC5658-S-C Range 120~270 180~390 .

Features

ation PC 100 mW Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Collector-Base Breakdown Voltage V(BR)CBO 60 - - Collector-Emitter Breakdown Voltage V(BR)CEO 50 - - Emitter-Base Breakdown Voltage V(BR)EBO 7 - - Collector Cut-off Current ICBO - - 0.1 Emitter Cut-off Current IEBO - - 0.1 DC Current Gain hFE 120 - 560 Collector-Emitter Saturation Voltage VCE(sat) - - 0.4 Transition Frequency fT - 180 - Collector Output Capacitance Cob - - 3..