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2SC2550

Part Number 2SC2550
Manufacturer Toshiba
Title Silicon NPN Transistor
Description : I SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (INDUSTRIAL APPLICATIONS) 2SC2550 HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APP...
Features . High Breakdown Voltage : VCEO=50V, VEB0=8V
• High Gain and Excellent hEE Linearity hFE- 70^400 at VCE=1V, I c=10mA
• Complementary to 2SA1090. Iln it in mm 05.8MAX. 04.95MAX. 25 00.45 [|[ j2fe.54 MAXIMUM RATINGS fTa=25°r.^ CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emit...

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2SC2551 : TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2551 2SC2551 Hight Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications Industrial Applications Unit: mm • High voltage: VCBO = 300 V, VCEO = 300 V • Low saturation voltage: VCE (sat) = 0.5 V (max) • Small collector output capacitance: Cob = 3 pF (typ.) • Complementary to 2SA1091. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC .

2SC2551 : Elektronische Bauelemente 2SC2551 0.1 A , 300 V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  High Voltage  Low Saturation Voltage  Small Collector Output Capacitance  Complementary to 2SA1091 CLASSIFICATION OF hFE(1) Product-Rank 2SC2551-R 2SC2551-O Range 30~90 50~150 TO-92 GH J AD B K E CF Emitter Collector Base REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 - 2.42 2.66 0.36 0.76 Collector  ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Collector to Base Voltage Collecto.

2SC2551 : 1. EMITTER 2. COLLECTOR 3. BASE 2SC2551(NPN) TO-92 Bipolar Transistors TO-92 Features High voltage Low saturation voltage Small collector output capacitance Complementary to 2SA1091 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO VCEO VEBO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage 300 V 300 V 6V Dimensions in inches and (millimeters) IC Collector Current -Continuous 100 mA PC Collector power dissipation 400 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base brea.

2SC2552 : .

2SC2552 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 2 A IB Base Current-Continuous Pc Total Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2552 isc website:www.iscsemi.com .

2SC2552 : ·With TO-220C package ·High collector breakdown voltage : VCEO=400V(Min) ·Excellent switching time : tr=1.0µs(Max.) : tf=1.0µs(Max.@IC=0.8A 2SC2552 APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 20 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 2 0.5 1.5 W UNIT.

2SC2553 : SILICON NPN TRIPLE DIFFUSED TYPE SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATION. INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX.. . 03.6±O-2 FEATURES: . Excellent Switching Times : t r =1.0/is(Max.), tf=1.0/is(Max. ) at I C=4A . High Collector Breakdown Voltage : V CEo=400V MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Ta=25°C Tc=25°C Junction Temperature Storage Temperature Range V CBO 'CEO ^EBO L stg ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL Collector Cut-off Curren.

2SC2553 : ·With TO-220C package ·High collector breakdown voltage : VCEO=400V(Min) ·Excellent switching time : tr=1.0µs(Max.) : tf=1.0µs(Max.@IC=4A 2SC2553 APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 40 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 5 1 1.5 W UNIT V V.

2SC2553 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A IB Base Current-Continuous Pc Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 40 w 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2553 isc website:www.iscsemi.c.

2SC2555 : .

2SC2555 : ·High Collector-Emitter Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 10 A IB Base Current-Continuous Pc Collector Power Dissipation @ TC=25℃ TJ Junction.

2SC2556 : ·High transistor frequency ·Low Saturation Voltage ·High VCBO ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency output amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCER Collector-Emitter Voltage RBE=150Ω 130 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak PC Collector Power Dissipation @ Tc=25℃ TJ Junction Temperature Tstg Storage Temperature Range 1.5 A 5 W 150 ℃ -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is regis.

2SC2556 : ·With TO-126 package ·High VCBO ·Low collector saturation voltage ·High transition frequency APPLICATIONS ·Audio frequency output amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2SC2556 VCBO Collector-base voltage 2SC2556A 2SC2556 VCEO Collector- emitter voltage 2SC2556A VEBO IC ICM PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open collector 50 5 1 1.5 1.2 150 -55 +150 V A A W 180 40 V CONDITIONS VALUE 130 V UNIT SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power T.

2SC2556A : ·With TO-126 package ·High VCBO ·Low collector saturation voltage ·High transition frequency APPLICATIONS ·Audio frequency output amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2SC2556 VCBO Collector-base voltage 2SC2556A 2SC2556 VCEO Collector- emitter voltage 2SC2556A VEBO IC ICM PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open collector 50 5 1 1.5 1.2 150 -55 +150 V A A W 180 40 V CONDITIONS VALUE 130 V UNIT SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power T.

2SC2558 : HG Semiconductors HG RF POWER TRANSISTOR 2SC2558 ROHS Compliance,Silicon NPN POWER TRANSISTOR Note : Above parameters , ratings , limits and conditions are subject to change www.HGSemi.com Sep. 1998 HG Semiconductors 2SC2558HG RF POWER TRANSISTOR ROHS Compliance,Silicon NPN POWER TRANSISTOR Note : Above parameters , ratings , limits and conditions are subject to change www.HGSemi.com Sep. 1998 .

2SC2559 : HG Semiconductors HG RF POWER TRANSISTOR 2SC2559 ROHS Compliance,Silicon NPN POWER TRANSISTOR Note : Above parameters , ratings , limits and conditions are subject to change www.HGSemi.com Sep. 1998 HG Semiconductors 2SC2559HG RF POWER TRANSISTOR ROHS Compliance,Silicon NPN POWER TRANSISTOR Note : Above parameters , ratings , limits and conditions are subject to change www.HGSemi.com Sep. 1998 .




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