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2SD799


Part Number 2SD799
Manufacturer Toshiba
Title Silicon NPN Transistor
Description 2SD799 SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES • High DC Current...
Features
• High DC Current Gain : hFE=600(Min. ) (VCE=2V,I C=2A)
• Monolithic Construction with Built-in Base- Emitter Shunt Resistor. INDUSTRIAL APPLICATIONS Unit in mm 10.5MAX ., _gf3.6±0.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage ...

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2SD792 : ·With TO-3 package ·High voltage ·Wide area of safe operation APPLICATIONS ·For line-operated horizontal deflection output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=90 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 4 5 7 35 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTI.

2SD792 : ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCE0 Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 4 V IC Collector Current- Continuous 5 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC≤90℃ TJ Junction Temperature 7 A 35 W 130 ℃ Tstg Storage Temperature Range -65~130 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark is.

2SD793 : ·Collector-Emitter BreakdownVoltage- : V(BR)CEO= 30V(Min.) ·Low Collector to Emitter Saturation Voltage : VCE(sat)= 2.0V(Max.)@IC= 1.5A ·Excellent hFE linearity ·Complement to Type 2SB743 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junct.

2SD794 : .

2SD794 : ·With TO-126 package ·Complement to type 2SB744/744A ·High current 3A ·Excellent hFE linearity APPLICATIONS ·For use in audio frequency amplifier and general purpose applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER Collector-base voltage 2SD794 VCEO Collector-emitter voltage 2SD794A VEBO IC ICM IB Emitter-base voltage Collector current (DC) Collector current-Peak Base current (DC) Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 10 150 -55~150 Open collector Open base 60 5 3 5 0.6 1 W V A A A CONDITIONS Open emitter VALUE 70 45 V UNIT V SavantIC Sem.

2SD794 : ·High Collector Current -IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min) ·Complement to Type 2SB744 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio frequency amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 5 A 10 W 1 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD794 isc websit.

2SD794A : ·With TO-126 package ·Complement to type 2SB744/744A ·High current 3A ·Excellent hFE linearity APPLICATIONS ·For use in audio frequency amplifier and general purpose applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER Collector-base voltage 2SD794 VCEO Collector-emitter voltage 2SD794A VEBO IC ICM IB Emitter-base voltage Collector current (DC) Collector current-Peak Base current (DC) Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 10 150 -55~150 Open collector Open base 60 5 3 5 0.6 1 W V A A A CONDITIONS Open emitter VALUE 70 45 V UNIT V SavantIC Sem.

2SD795 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.7V(Max) @IC= 2.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3.0 A ICM Collector Current-Peak 6.0 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperat.

2SD796 : .

2SD797 : ·With TO-3 package ·High current capability ·High power dissipation APPLICATIONS ·High power amplifier applications ·High power switching applications ·DC-DC converter applications ·Regulator applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 100 80 7 30 8 200 175 -65~175 UNIT V V V A A W SavantIC Semiconductor Prod.

2SD797 : SILICON NPN TRIPLE DIFFUSED TYPE HGIH POWER AMPLIFIER APPLICATIONS. HIGH POWER SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS REGULATOR APPLICATIONS. FEATURES • High Power Dissipation : Pc=200W (Tc=25°C) • High Collector Current : I C=30A INDUSTRIAL APPLICATIONS Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation ?l-o r ' Junction Temperature Storage Temperature Range SYMBOL VcBO VcEO VEBO ic IB ?C T.i T ste ELECTRICAL CHARACTERISTICS (Ta==25°C) CHARACTERISTIC SYMBOL Collector Cut-off Current ICB0 Emitter Cut-off Current lEBO Collector-Emitter Br.

2SD797 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·High Power Dissipation ·High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power amplifier applications. ·High Power switching applications. ·DC-DC converter applications. ·Regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 30 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 8 A 200 W 175 ℃ Tstg Storage Temperature Rang.

2SD798 : : SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) . 2SD798 IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES • High DC Current Gain : hFE=1500 (Min.)(V CE=2V, I C=2A) INDUSTRIAL APPLICATIONS Unit in mm IQ.SMAX., ,03.6±a.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO v EBO ic IB PC T J Tstg RATING UNIT 600 V 300 V 5V 6A 1A 30 W 150 -55^150 °C °C 2.54 2.54 d P' J-. ?c X ^ . L BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER EQUIVALENT CIRCUIT =s2kn ! COLLECTOR .

2SD798 : ·With TO-220 package ·High voltage ·DARLINGTON APPLICATIONS ·With switching and igniter applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector MAX 600 300 5 6 1 30 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise.

2SD798 : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 4A ·High DC Current Gain : hFE= 1500(Min) @ IC= 2A, VCE= 2V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage switching igniter applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.0 A 30 W 150 ℃ Tstg Sto.

2SD799 : ·With TO-220 package ·High DC current gain ·DARLINGTON APPLICATIONS ·Igniter applications ·High voltage switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 600 400 5 6 1 30 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAME.




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