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2SD1 069 SILICON NPN DOUBLE DIFFUSED TYPE (PCT PROCESS) TV HORIZONTAL DEFLECTION OUTPUT APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES: . Built in Damper Type. . High Collector Current Capability. . High Collector Power Dissipation Capability. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTI.
. Built in Damper Type. . High Collector Current Capability. . High Collector Power Dissipation Capability.
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Peak)
Base Current
Collector Power Dissipation
Ta=25°C Tc=25°C
Junction Temperature
Storage Temperature Range
SYMBOL VCBO VCEO VEBO ic ICP T BM
PC
T
j
T stg
RATING UNIT
300
V
150
V
6
V
7
A
15
A
2
A
1.75
¥
40
150
°C
-55-150 °C
Unit in mm
10. 3 MAX. 03.6 ±.0.2
C2J
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Xp
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CO Hi
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1.5 MAX. _|| Q7.
| Distributor | Stock | Price | Buy |
|---|
| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
| 1 | 2SD1060 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SD1060 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 3 | 2SD1060 |
UTC |
NPN EPITAXIAL PLANAR SILICON TRANSISTOR |
|
| 4 | 2SD1060 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SD1060 |
ON Semiconductor |
Bipolar Transistor |
|
| 6 | 2SD1061 |
INCHANGE |
NPN Transistor |
|
| 7 | 2SD1061 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 8 | 2SD1061 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SD1062 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 10 | 2SD1062 |
INCHANGE |
NPN Transistor |
|
| 11 | 2SD1062 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 12 | 2SD1062 |
ON Semiconductor |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 13 | 2SD1063 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 14 | 2SD1063 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 15 | 2SD1063 |
INCHANGE |
NPN Transistor |
|
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