2SJ75 SILICON P CHANNEL JUNCTION TYPE LOW NOISE AUDIO AMPLIFIER APPLICATIONS. DIFFERENTIAL AMPLIFIER APPLICATIONS. FEATURES • Recommended for first stages of EQ Amplifiers. • High ]y fs l : ly fs l=22mS(Typ.) • Excellent Pair Characteristics : | Vc-Sl " Vr-S2 = I 20mV (Max.) (Vds=-10V, l.
• Recommended for first stages of EQ Amplifiers.
• High ]y fs l : ly fs l=22mS(Typ.)
• Excellent Pair Characteristics
:
| Vc-Sl
" Vr-S2 = I
20mV
(Max.)
(Vds=-10V, lD=-lmA)
• Low Noise : en = .95nV IViz (Typ.) (VDS = -10V, ID = -1mA, f = 1kHz)
• High Input Impedance : Iqss = ^- n^ (Max.) (V G S=25V)
• Complementary to 2SK240
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VGDS IG PD
T.i
Tstg
RATING 25
-10
400 *2
125
-55^125
UNIT V mA mW
°C °C
6.4MAX
Unit : mm
^4 5 6„ 123 1. SO.
Distributor | Stock | Price | Buy |
---|
No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | 2SJ72 |
Toshiba Semiconductor |
Silicon P-Channel Transistor | |
2 | 2SJ73 |
Toshiba |
Silicon P-Channel Transistor | |
3 | 2SJ74 |
Toshiba Semiconductor |
Silicon P-Channel Transistor | |
4 | 2SJ76 |
Hitachi Semiconductor |
Silicon P-Channel MOS FET | |
5 | 2SJ76 |
Renesas Technology |
(2SJ76 - 2SJ79) Silicon P-Channel MOS FET | |
6 | 2SJ77 |
Hitachi Semiconductor |
Silicon P-Channel MOS FET | |
7 | 2SJ77 |
Renesas Technology |
(2SJ76 - 2SJ79) Silicon P-Channel MOS FET | |
8 | 2SJ78 |
Hitachi Semiconductor |
Silicon P-Channel MOS FET | |
9 | 2SJ78 |
Renesas Technology |
(2SJ76 - 2SJ79) Silicon P-Channel MOS FET | |
10 | 2SJ79 |
Hitachi Semiconductor |
Silicon P-Channel MOS FET | |
11 | 2SJ79 |
Renesas Technology |
(2SJ76 - 2SJ79) Silicon P-Channel MOS FET | |
12 | 2SJ0164 |
Panasonic |
Silicon P-channel FET | |
13 | 2SJ0536 |
Panasonic Semiconductor |
P-Channel MOSFET | |
14 | 2SJ103 |
Toshiba Semiconductor |
P-Channel MOSFET | |
15 | 2SJ104 |
Toshiba Semiconductor |
P-Channel MOSFET |