DatasheetsPDF.com

3SK22


Part Number 3SK22
Manufacturer Toshiba
Title Silicon N-Channel Transistor
Description SILICON N CHANNEL JUNCTION TYPE 3SK22 FM TUNER APPLICATIONS. VHF BAND AMPLIFIER APPLICATIONS. FEATURES • High Power Gain : Gps =20dB (Typ. ) (f=...
Features
• High Power Gain : Gps =20dB (Typ. ) (f=100MHz)
• Low Noise Figure : NF=2dB (Typ. ) (f=100MHz)
• High Forward Transfer Admittance : |y fs | = 7ms (Typ.) (f=lkHz)
• High Input Impedance : Riss = 12kfi (Typ.) (f=100MHz)
• Low Reverse Transfer Capacitance : Crss =0 - 6 P F (Max.) Unit in 05.8UAX. MA...

File Size 54.31KB
Datasheet 3SK22 PDF File








Similar Ai Datasheet

3SK206 : DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK206 RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES • • • • Suitable for Low Crss: High GPS: Low NF: use as RF amplifier in UHF TV tuner. 0.02 pF TYP. 20 dB TYP. 1.1 dB TYP. 2.9±0.2 PACKAGE DIMENSIONS in millimeters 0.4 –0.05 1.5 +0.2 –0.1 2.8 –0.3 +0.2 2 0.95 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate1 to Source Voltage Gate2 to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDSX VG1S VG2S ID PT Tch Tstg 10 –4.5 –4.5 80 200 125 –55 to +125 V V V mA mW °C °C 3 (1.9) 0.95 1 +0.1 –0.05 4 5° 5° 1.1 +0.2 –3.1 0.8 0.

3SK207 : 3SK207 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK207 TV Tuner, UHF RF Amplifier Applications Unit: mm · Superior cross modulation performance. · Low reverse transfer capacitance: Crss = 0.015 pF (typ.) · Low noise figure: NF = 1.9dB (typ.) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate 1-source voltage Gate 2-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VG1S VG2S ID PD Tch Tstg Rating 13.5 ±8 ±8 30 150 125 -55~125 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-3J1A Weight: 0.013 g (typ.) Characteristics Gate 1 leakage .

3SK222 : DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK222 RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • The Characteristic of Cross-Modulation is good. CM = 92 dBµ TYP. @ f = 200 MHz, GR = –30 dB PACKAGE DIMENSIONS (Unit: mm) 0.4 +0.1 –0.05 1.5 +0.2 –0.1 2.8 +0.2 –0.3 • Low Noise Figure: • High Power Gain: • Enhancement Type. NF1 = 1.2 dB TYP. (f = 200 MHz) NF2 = 1.0 dB TYP. (f = 55 MHz) GPS = 23 dB TYP. (f = 200 MHz) (1.8) 0.85 0.95 2.9±0.2 2 • Automatically Mounting: • Small Package: Embossed Type Taping 4 Pins Mini Mold 1 5° 5° Drain to Source Voltage Gate1 to Source Voltage Gate2 to Source Voltage Gate1 to Drain.

3SK223 : DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK223 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • The Characteristic of Cross-Modulation is good. CM = 101 dBµ TYP. @ f = 470 MHz, GR = –30 dB • Low Noise Figure: • High Power Gain: • Enhancement Type. 2.9±0.2 (1.8) PACKAGE DIMENSIONS (Unit: mm) 2.8 –0.3 +0.2 +0.2 +0.2 0.4 –0.3 NF2 = 0.9 dB TYP. (f = 55 MHz) GPS = 20 dB TYP. (f = 470 MHz) 0.85 0.95 1.5 –0.3 2 3 0.4 –0.3 0.4 –0.3 0.16 +0.2 –0.3 +0.2 NF1 = 2.2 dB TYP. (f = 470 MHz) • Suitable for use as RF amplifier in CATV tuner. • Automatically Mounting: • Small Package: Embossed Type Taping 4 Pins Mini Mold 1 +0.2 4 ABSOLU.

3SK224 : DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK224 RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise Figure: • High Power Gain: • Automatically Mounting: • Small Package: NF = 1.8 dB TYP. (f = 900 MHz) GPS = 17 dB TYP. (f = 900 MHz) PACKAGE DIMENSIONS (Unit: mm) 0.4–0.05 0.4–0.05 0.4–0.05 0.16–0.06 +0.1 +0.1 Embossed Type Taping 4 Pins Mini Mold 2.9±0.2 (1.8) 0.85 0.95 2 3 4 5° +0.1 • Suitable for use as RF amplifier in UHF TV tuner. 2.8–0.1 +0.2 1.5–0.1 +0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate1 to Source Voltage Gate2 to Source Voltage Gate1 to Drain Voltage Gate2 to Drain Voltage Dra.

3SK225 : 3SK225 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK225 TV Tuner, VHF RF Amplifier Applications FM Tuner Applications TV Tuner, UHF RF Amplifier Applications Unit: mm · Superior cross modulation performance. · Low noise figure: NF = 2.0dB (typ.) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate 1-source voltage Gate 2-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VG1S VG2S ID PD Tch Tstg Rating 13.5 ±8 ±8 30 150 125 -55~125 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-3J1A Weight: 0.013 g (typ.) Characteristics Gate 1 leaka.

3SK226 : 3SK226 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK226 TV Tuner, VHF RF Amplifier Applications FM Tuner Applications Unit: mm · Superior cross modulation performance. · Low reverse transfer capacitance: Crss = 0.015 pF (typ.) · Low noise figure: NF = 1.1dB (typ.) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate 1-source voltage Gate 2-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VG1S VG2S ID PD Tch Tstg Rating 13.5 ±8 ±8 30 150 125 -55~125 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-3J1A Weight: 0.013 g (typ.) Character.

3SK227 : High Frequency FETs 3SK227 Silicon N-Channel 4-pin MOS FET For VHF amplification unit: mm 2.8 –0.3 +0.2 +0.2 M Di ain sc te on na tin nc ue e/ d s Features 0.65±0.15 2.9±0.2 1.9±0.2 1.5 –0.3 0.65±0.15 1.1 –0.1 +0.2 Parameter Symbol Ratings 15 Unit V V V Drain to Source voltage VDS Gate 2 to Source voltage Drain current VG2S ID PD ±8 ±30 200 150 mA Allowable power dissipation Channel temperature Storage temperature mW °C °C 1: Source 2: Drain 3: Gate2 4: Gate1 Mini Type Package (4-pin) Tch Tstg −55 to +150 Marking Symbol: CX s Electrical Characteristics (Ta = 25°C) Parameter Symbol Drain current IDS Conditions min 6 typ 0 to 0.1 Gate 1 to Source voltage VG1S ±8.

3SK228 : www.DataSheet4U.com 3SK228 GaAs Dual Gate MES FET ADE-208-280 1st. Edition Application UHF TV tuner RF Amplifier Outline www.DataSheet4U.com 3SK228 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 –6 –6 50 150 125 –55 to +125 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source cutoff current Gate 1 to source breakdown voltage Gate 2 to source breakdown voltage Gate 1 cutoff current Gate 2 cutoff current Drain current Symbol I DSX V(BR)G1SS V(BR)G2SS I G1SS I G2S.

3SK231 : of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks o.

3SK233 : 3SK233 Silicon N Channel Dual Gate MOS FET UHF TV Tuner RF Amplifier Feature • Low voltage operation. • Superior cross modulation characteristics. Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit ——————————————————————– Drain to source voltage VDS 12 V ——————————————————————– Gate 1 to source voltage VG1S ±10 V ——————————————————————– Gate 2 to source voltage VG2S ±10 V ——————————————————————– Drain current ID 35 mA ——————————————————————– Channel power dissipation Pch 150 mW ——————————————————————– Channel temperature Tch 125 °C ——————————————————————– Storage temperature Tstg –55 to +125 °C ——————————————————————– MPAK-4 2 3 1 4 1. Source 2.

3SK239A : 3SK239A GaAs Dual Gate MES FET Application UHF RF amplifier Features • Excellent low noise characteristics (NF = 1.3 dB Typ at f = 900 MHz) • Capable of low voltage operation Outline 3SK239A Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 –6 –6 50 100 125 –55 to +125 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min — –6 –6 — — 14 — — 20 — — — 17 — Typ — — — — — 19 –1.2 –1.2 31 0.58 0.36 0.028 19 1.3 Max 50 — — –5 –5 28 –1.6 –1.6 — 1.0 0.6 0.05 — 2.0 Unit µA V V µA µ.

3SK240 : TOSHIBA Field Effect Transistor GaAs N-Channel Dual Gate MES Type 3SK240 3SK240 TV Tuner, UHF RF Amplifier Applications Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Gate 1-drain voltage Gate 2-drain voltage Gate 1-source voltage Gate 2-source voltage Gate 1 current Gate 2 current Power dissipation Channel temperature Storage temperature range Symbol VG1D0 VG2D0 VG1S VG2S IG1 IG2 PD Tch Tstg Rating -9 -9 -4 -4 1 1 150 125 -55~125 Unit V V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-3J1A Weight: 0.013 g (typ.) Characteristics Gate 1 leakage current Gate 2 leakage current Drain current Gate 1-source cut-off voltage Gate 2-source c.

3SK241 : ( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com www.DataSheet4U.com .

3SK248 : Ordering number:ENN4540 N-Channel Enhancement Silicon MOSFET 3SK248 Muting/Switching Applications Features · MOSFET with a back gate terminal. · Enhancement type. · Small ON resistance. · Small-sized package permitting 3SK248-applied sets to be made smaller and slimmer. Package Dimensions unit:mm 2100A 1.9 0.95 0.95 0.4 43 [3SK248] 0.16 0 to 0.1 1.5 0.5 2.5 12 0.95 0.85 2.9 0.6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID PD Tch Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Drain-to-So.

3SK249 : TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK249 3SK249 TV Tuner, UHF RF Amplifier Applications Unit: mm • Superior cross modulation performance. • Low reverse transfer capacitance: Crss = 20 fF (typ.) • Low noise figure.: NF = 1.5dB (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Gate 1-source voltage Gate 2-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range VDS VG1S VG2S ID PD Tch Tstg 12.5 ±8 ±8 30 100 125 −55~125 V V V mA mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)