WSBE8518 |
|
Part Number | WSBE8518 |
Manufacturer | Vishay (https://www.vishay.com/) |
Description | www.vishay.com WSBE Series Vishay Dale Power Metal Strip® Shunt Resistor, Low TCR (Down to < ± 10 ppm/°C), Very Low Value (Down to 15 μΩ) LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models Infographic... |
Features |
• High power capability that enables current sensing to 1825 A • Proprietary processing technique produces extremely low resistance values • All welded construction • Solid metal nickel-chrome alloy resistive element with unique design for low TCR (down to ± 10 ppm/°C) • Very low inductance (< 5 nH) • Low thermal EMF (as low as < 1.25 μV/°C) • AEC-Q200 qualified • PATENT(S): www.vishay.com/patents • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 STANDARD ELECTRICAL SPECIFICATIONS GLOBAL MODEL SIZE POWER RATING P70 °C W TOLERANCE ±% RESISTANCE V... |
Datasheet |
![]() PDF 145.76KB |
Distributor | Stock | Price | Buy |
---|
No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
|
|
![]() Vishay |
Power Metal Strip Shunt Resistor |
![]() |
|
|
![]() Weitron |
High Voltage Power Schottky Rectifier |
![]() |
|
|
![]() WillSEMI |
Schottky Barrier Diode |
![]() |
|
|
![]() Wooseok |
PNP EPITAXIAL SILICON TRANSISTOR |
![]() |
|
|
![]() WillSEMI |
Schottky Barrier Diode |
![]() |
|
|
![]() WillSEMI |
Schottky Barrier Diode |
![]() |
|
|
![]() WillSEMI |
Schottky Barrier Diode |
![]() |
|
|
![]() WillSEMI |
Schottky Barrier Diode |
![]() |
|
|
![]() Will Semiconductor |
Middle Power Schottky Barrier Diode |
![]() |
|
|
![]() WillSEMI |
Schottky Barrier Diode |
![]() |
|
|
![]() WillSEMI |
Schottky Barrier Diode |
![]() |
|
|
![]() WillSEMI |
Schottky Barrier Diode |
![]() |