The 2N3954 thru 2N3955/A series of N-channel monolithic dual JFETs is designed for low to medium frequency differential amplifier applications requiring low noise, high common-mode rejection, and very tight match. Absolute Maximum Ratings (25°o Gate-Drain or Gate-Source Voltage —50V Gate-to-Gate.
Breakdown VGS 30V, VDS "" o CONDITIONS vds-o, Ig" 1 MA V DS = 20V. D | - 1 „A Gate-Source Voltage V D S" 20V. ID - 200 fjA V DS -20V. Vgs-0 Common Sourc e Forwjr.1 3ts 9 os C,^ s e Output Conductance Capacitance e Input V DS -20V, vGs o Hanger Capaalanw Co-nmon Sourc Noise Fniuri! Deferential Gats; V DG " 10V. S I = V D s- 20V. V G S 0, G K - 10Mt> V DS = 20V, D l = 200; ; A V DS -20V.Vgs Gate-Sou-ce Different! A . V GS1 VqS2 Voltage Change with Transcoriduciance Ra1 Vqs - 20V, A ID "= 200 u T- 25"C to -55 : C T - 25''C lu 125X .
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | 2N3950 |
Motorola |
NPN silicon RF power transistor | |
2 | 2N3954 |
National Semiconductor |
N-Channel Monolithic Dual JFETs | |
3 | 2N3954 |
Micross |
MONOLITHIC DUAL N-CHANNEL JFET | |
4 | 2N3954 |
Siliconix |
monolithic dual n-channel JFET | |
5 | 2N3954A |
National Semiconductor |
N-Channel Monolithic Dual JFETs | |
6 | 2N3954A |
Micross |
MONOLITHIC DUAL N-CHANNEL JFET | |
7 | 2N3954A |
Siliconix |
monolithic dual n-channel JFET | |
8 | 2N3955 |
ETC |
N-Channel Dual Silicon Junction Field-Effect Transistor | |
9 | 2N3955 |
Micross |
MONOLITHIC DUAL N-CHANNEL JFET | |
10 | 2N3955 |
Siliconix |
monolithic dual n-channel JFET | |
11 | 2N3955A |
National Semiconductor |
N-Channel Monolithic Dual JFETs | |
12 | 2N3955A |
Siliconix |
monolithic dual n-channel JFET | |
13 | 2N3956 |
National Semiconductor |
N-Channel Monolithic Dual JFETs | |
14 | 2N3956 |
Micross |
MONOLITHIC DUAL N-CHANNEL JFET | |
15 | 2N3956 |
Siliconix |
monolithic dual n-channel JFET |