The -50V 2N4117/A, 2N4118/A, and 2N4119/A JFET’s are targeted for ultra high input impedance applications for mid to high frequency designs. Gate leakages are typically 1pA at room temperatures. The 2N4117 has a cutoff voltage of less than 1.8V ideal for lowlevel power supplies. The TO-72 package is.
LOW LEAKAGE: 0.25 PA TYPICAL LOW INPUT CAPACITANCE: 2.0 PF TYPICAL HIGH INPUT IMPEDANCE Gate 3 DESCRIPTION The -50V 2N4117/A, 2N4118/A, and 2N4119/A JFET’s are targeted for ultra high input impedance applications for mid to high frequency designs. Gate leakages are typically 1pA at room temperatures. The 2N4117 has a cutoff voltage of less than 1.8V ideal for lowlevel power supplies. The TO-72 package is hermetically sealed and suitable for military applications. TX, TXV, and S-Level Screening Available - Consult Factory. Drain 2 4 Case Source 1 Bottom View ORDERING GUIDE Part Number .
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
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1 | 2N4119 |
Calogic LLC |
N-Channel JFET General Purpose Amplifier | |
2 | 2N4119 |
InterFET |
N-Channel JFET | |
3 | 2N4119 |
Motorola |
JFET | |
4 | 2N4119 |
Solitron Devices |
N-Channel JFET | |
5 | 2N4119A |
Calogic LLC |
N-Channel JFET General Purpose Amplifier | |
6 | 2N4119A |
Vishay Siliconix |
N-Channel JFETs | |
7 | 2N4119A |
Micross |
Ultra-High Input Impedance N-Channel JFET | |
8 | 2N4119A |
InterFET |
N-Channel JFET | |
9 | 2N4119A |
Motorola |
JFET | |
10 | 2N4111 |
INCHANGE |
NPN Transistor | |
11 | 2N4111 |
Seme LAB |
Bipolar NPN Device | |
12 | 2N4112 |
Seme LAB |
Bipolar NPN Device | |
13 | 2N4112 |
INCHANGE |
NPN Transistor | |
14 | 2N4113 |
INCHANGE |
NPN Transistor | |
15 | 2N4113 |
Seme LAB |
Bipolar NPN Device |