D1025UK Datasheet

D1025UK METAL GATE RF SILICON FET

TetraFET D1025UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA D (2 pls) C E B 1 2 3 A G 5 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 175MHz SINGLE ENDED PIN 1 PIN 3 PIN 5 H I FM K DT SOURCE (COMMON) PIN 2 SOURCE (COMMON) PIN 4 DRAIN JN GATE SOURCE.

Features

• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN
  – 16 dB MINIMUM APPLICATIONS
• HF/VHF COMMUNICATIONS from 1 MHz to 175 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD Power Dissipation 175W BVDSS Drain
  – Source Breakdown Voltage 70V BVGSS Gate
  – Source Breakdown Voltage ±20V ID(sat) Drain Current 25A Tstg Storage Temperature
  –65 to 150°C Tj Maximum Operating Junction Temperature 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dim.