D2204UK METAL GATE RF SILICON FET

D2204UK METAL GATE RF SILICON FET

TetraFET D2204UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA D (2 pls) C E B 1 2 3 A G 5 4 H I PIN 1 PIN 3 PIN 5 FM K DT SOURCE (COMMON) PIN 2 SOURCE (COMMON) PIN 4 DRAIN JN GATE SOURCE (COMMON) DIM mm A 6.35 DIA B 3.17 DIA C 18.41 D 5.46 E 5.21 F 7.62 G 21.

Features

• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN
  – 10 dB MINIMUM APPLICATIONS
• VHF/UHF COMMUNICATIONS from DC to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD Power Dissipation 70W BVDSS Drain
  – Source Breakdown Voltage 40V BVGSS Gate
  – Source Breakdown Voltage ±20V ID(sat) Drain Current 16A Tstg Storage Temperature
  –65 to 150°C Tj Maximum Operating Junction Temperature 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensio.