monolithic dual n-channel JFETs designed for • • • • FET Input Amplifiers • Low and Medium Frequency Differential Amplifiers • Impedance Converters • Precision Instrumentation Amplifiers • Comparators ABSOLUTE MAXIMUM RATINGS (25°C) Gate-To-Gate Voltage ......................... ±40V Gate-Drain or G.
tput Conductance Z "a C -CO ~ Z "a C CO S Z "a C ~ 8-Pin Mini DIP See Section 5 ~ ~ G, G, 5, 5, WIN 1~ ~ "~ G, NC 0, 5, ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) Characteristic 1 IGSS 1- 2 S VGS(ofO I- T ,3 A BVGSS I- T 4 C IDSS 15 15 'G VGS -;01---2 Of, 1---;0 Y 90, ,_N A - ,11 M Ciss - 12 C Crss 13 'N 14 M -~ 15 C -7 16 ~ IVGS1-V GS2 1 AIVGS1- V GS2 1 aT CMRR Gate Reverse Current (Note 1) Gate-Source Cutoff Voltage Gate-Source Breakdown Voltage Saturation Drain Current (Note 2) Gate Current (Note 1) Gate-Source Voltage Common-Source Forward Transconduct.
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
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1 | NPD8301 |
Siliconix |
dual n-channel JFET | |
2 | NPD8301 |
National Semiconductor |
N-Channel Monolithic Dual JFET | |
3 | NPD8302 |
National Semiconductor |
N-Channel Monolithic Dual JFET | |
4 | NPD8303 |
Siliconix |
dual n-channel JFET | |
5 | NPD8303 |
National Semiconductor |
N-Channel Monolithic Dual JFET |