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n-channel JFETs designed for • • • • VHF Buffer Amplifiers • IF Amplifiers H Performance Curves NIP See Section 4 BENEFITS • High Gain 9fs = 120,000 I1mho Typical • Wide Dynamic Range • Low Intermodulation Distortion ABSOLUTE MAXIMUM RATINGS (25°C) Gate-Drain or Gate-Source Voltage ......... ......
tage
4 A BVGSS Gate-Source Breakdown Voltage
-2 -25
-10 -1 -25
-4 -3 -25
-10
V
VDS '" 5 V. ID - 1 rnA
IG - -1 J1A, VDS - 0 V
I,15
16
T I C
IDSS VGSlfl
Saturation Drain Current (Note 2) 100 Gate-Source Forward Voltage
500 80 1
250 200 1
700 mA VDS'" 15 V, VGS - 0 V
1
V
IG - 1 rnA, VOS - 0 V
rDS(on) Drain-Source ON Resistan;e
10
11
8
| Distributor | Stock | Price | Buy |
|---|
| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
| 1 | J320 |
Siliconix |
n-channel JFET |
|
| 2 | J321 |
Siliconix |
n-channel JFET |
|
| 3 | J325 |
NEC |
2SJ325 |
|
| 4 | J300 |
National Semiconductor |
N-Channel JFET |
|
| 5 | J300 |
Motorola |
JFET HIGH FREQUENCY AMPLIFIER |
|
| 6 | J300 |
Siliconix |
n-channel JFET |
|
| 7 | J3006G21D |
PULSE |
PULSEJACKTM Surface Mount 1x1 |
|
| 8 | J3011G21D |
PULSE |
PULSEJACKTM Surface Mount 1x1 |
|
| 9 | J3018G21K |
PULSE |
PULSEJACKTM Surface Mount 1x1 |
|
| 10 | J3026G01D |
PULSE |
PULSEJACKTM Surface Mount 1x1 |
|
| 11 | J3026G21D |
PULSE |
PULSEJACKTM Surface Mount 1x1 |
|
| 12 | J3026G21DNL |
PULSE |
PULSEJACKTM Surface Mount 1x1 |
|
| 13 | J303 |
NEC |
2SJ303 |
|
| 14 | J304 |
Vishay |
N-Channel JFETs |
|
| 15 | J304 |
Motorola |
JFET High Frequency Amplifier |
|
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