monolithic dual H n-channel JFETs Performance Curves NQT See Sedion 4 designed for • • • • Very High Input Impedance DiHerential Amplifiers Electrometers • Impedance Converters BENEFITS • High Input Impedance IG = 0.1 pA Maximum (U421-3) • High Gain gfs = 140 !,mho Minimum@ ID= 3O I'A (U421·3) •.
3
U424-6
Unit
Min Typ Mox Min Typ Mox
Test Conditions
1 I-
2
1-
3S T
I-A 4T 1
15 c
16 1---;-
BVGSS BVGlG2 IGSS
IG VGS(off) VGS lOSS
Gate-Source Breakdown Voltage Gate-Gate Breakdown Voltage Gate Reverse Current (Note 1)
Gate Operating Current (Note 1) Gate-Source Cutoff Voltage Gate
·Source Voltage Saturation Drain Current
-40 -60
-40 -60
v
±40
±40
0.2
1.0 pA
0.5
1.0 oA
0.1
0.5
100
500 pA
-0.4
-2.0 -0.4
-3.0
V
-1.8
-2.9
60
1000 60
800 "A
IG"'-lp.A,VDS=O
IG '" -1 J..IA, ID '" 0, IS'" 0
T - +25°C T-+125 C
T - +25°C T - +125°C
VGS=-20V, VDS=O VOG '" lOV, 'D '" 30J..
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