The NF5101-3 (TO-72) and PF5101-3 (TO-92) are N-channel silicon Junction Field-Effect Transistors designed for ultra-low noise preamplifier applications, particularly hydrophones, particle detectors, high quality mic/phono/tape, video, vidicon and l-R sensor preampli- fiers. Absolute Maximum Rating.
^0.028-0.048
V 10.314 'GUI
* IO.7iT-1.2l9j
•
Electrical Characteristics
PARAMETER
CONDITIONS
PF/NF5101
PF/NF5102
PF/NF5103
UNITS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
BVgss
Gate-Source Breakdown
Gl = 1/jA, v ds = ov
40
Voltage
'gss
Gate Reverse Current
V GS (offi
Gate-Source Cutoff Voltage
V GS -- 15V, T A = 25°C
V os = OV
T a = 125°C
V DS -- 15V,
nA D l
-1
0.5
l DSS
Saturation Drain Current V DS = 15V, V GS -OV,
10
< Pulsed 300/is 2%
g fs
Common-Source Transconductance
V DG = 15V
D l - 0.5mA mA D l = 2
35
g os
Common-Source Output mA V DG = 15V, D l = 0.5
.
Distributor | Stock | Price | Buy |
---|
No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | PF5101 |
National Semiconductor |
N-Channel JFET | |
2 | PF5102 |
Fairchild Semiconductor |
N-Channel Switch | |
3 | PF5102 |
National Semiconductor |
N-Channel JFET | |
4 | PF5103 |
Fairchild Semiconductor |
N-Channel Switch | |
5 | PF5000 |
WON-TOP |
PRESS-FIT DIODE | |
6 | PF5001 |
WON-TOP |
PRESS-FIT DIODE | |
7 | PF5002 |
WON-TOP |
PRESS-FIT DIODE | |
8 | PF5003 |
WON-TOP |
PRESS-FIT DIODE | |
9 | PF5004 |
WON-TOP |
PRESS-FIT DIODE | |
10 | PF5005 |
WON-TOP |
PRESS-FIT DIODE | |
11 | PF5006 |
WON-TOP |
PRESS-FIT DIODE | |
12 | PF500A-360 |
DENSEI-LAMBDA |
PFHC module 500W/ 1000W | |
13 | PF5020 |
WON-TOP |
PRESS-FIT DIODE | |
14 | PF5020 |
NXP |
PMIC | |
15 | PF5023 |
NXP |
PMIC |