Silicon epitaxial Schottky barrier diode with an integrated guard ring for stress protection. Intended for high speed switching, circuit protection and voltage clamping applications. The diode is encapsulated in a SOD123 SMD plastic package. k a BAT56 QUICK REFERENCE DATA SYMBOL VR IF VF IR Tj Cd .
• Low leakage current
• Low turn-on and high breakdown voltage
• Ultra-fast switching speed. DESCRIPTION Silicon epitaxial Schottky barrier diode with an integrated guard ring for stress protection. Intended for high speed switching, circuit protection and voltage clamping applications. The diode is encapsulated in a SOD123 SMD plastic package.
k a
BAT56
QUICK REFERENCE DATA SYMBOL VR IF VF IR Tj Cd PARAMETER continuous reverse voltage continuous forward current forward voltage reverse current junction temperature diode capacitance VR = 1 V IF = 1 mA VR = 60 V CONDITIONS MAX. 60 30 410 200 1.
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