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2SJ363


Part Number 2SJ363
Manufacturer Hitachi Semiconductor
Title P-Channel MOSFET
Description 2SJ363 Silicon P-Channel MOS FET Application Low frequency power switching Features • Low on-resistance • Low drive current • 4 V gate drive dev...
Features
• Low on-resistance
• Low drive current
• 4 V gate drive device can be driven from 5 V source Outline UPAK 2 1 4 D 1. Gate 2. Drain 3. Source 4. Drain S 3 G 2SJ363 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to d...

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