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2SK1463


Part Number 2SK1463
Manufacturer Sanyo Semicon Device
Title N-Channel Silicon MOSFET
Description Ordering number:EN3466 Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. N-Channel Silicon MOSFET 2SK1463 Ultrahigh-...
Features
· Low ON-state resistance.
· Ultrahigh-speed switching.
· Converters. N-Channel Silicon MOSFET 2SK1463 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2076B [2SK1463] 16.0 3.4 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 2.8 2.0 2.0 1.0 0.6 3.5 20.4 123 Specifications Absolute Maxi...

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2SK1460 : Ordering number:EN3463A N-Channel Silicon MOSFET 2SK1460 Ultrahigh-Speed Switching Applications Features · Low ON-state resistance. · Ultrahigh-speed switching. · Micaless package facilitating mounting. Package Dimensions unit:mm 2078B [2SK1460] 10.0 3.5 4.5 2.8 3.2 7.2 16.0 16.1 0.9 1.2 14.0 3.6 0.7 0.75 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI (LS) Conditions 2.4 0.6 1.2 Ratings 900 ±30.

2SK1460 : ·Drain Current –ID=3.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=900 (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VALUE UNI T 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 3.5 A Ptot Total Dissipation@TC=25℃ 40 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SK1460 isc website:www.iscsemi.cn 1 isc & .

2SK1460LS : Ordering number : ENN3463B 2SK1460LS N-Channel Silicon MOSFET 2SK1460LS Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2078C [2SK1460LS] 10.0 3.2 3.5 7.2 Low ON-resistance. Ultrahigh-speed switching. Micaless package facilitating mounting. 4.5 2.8 16.1 16.0 3.6 0.9 1.2 14.0 1.2 0.75 1 2 3 2.4 0.7 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions 2.55 2.55 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS) Ratings 900 ±30 3.5 7 2.0 40 150 -.

2SK1461 : Ordering number:EN3464 Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. N-Channel Silicon MOSFET 2SK1461 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2056A [2SK1461] 15.6 3.2 14.0 4.8 2.0 1.3 1.2 3.5 15.0 20.0 2.6 1.6 2.0 1.0 123 0.6 1.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 5.45 Conditions PW≤10µs, duty cycle≤1% Tc=25°C 5.45 20.0 0.6 1 : Gate 2 : Drain 3 : Source SANYO : TO-3PB Ratings 900 ±30 5 10 120 2.5 1.

2SK1461 : ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS=900 (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VALUE UNI T 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 5 A Ptot Total Dissipation@TC=25℃ 120 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.cn 1 isc & iscsemi is r.

2SK1462 : Ordering number:EN3465 Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. N-Channel Silicon MOSFET 2SK1462 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2056A [2SK1462] 15.6 3.2 14.0 4.8 2.0 1.3 1.2 3.5 15.0 20.0 2.6 1.6 2.0 1.0 123 0.6 1.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 5.45 Conditions PW≤10µs, duty cycle≤1% Tc=25°C 5.45 20.0 0.6 1 : Gate 2 : Drain 3 : Source SANYO : TO-3PB Ratings 900 ±30 8 16 150 2.5 1.

2SK1462 : ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS=900 (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VALUE UNI T 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 8 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.cn 1 isc & iscsemi is re.

2SK1463 : ·Drain Current –ID=4.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=900 (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VALUE UNI T 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 4.5 A Ptot Total Dissipation@TC=25℃ 60 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SK1463 isc website:www.iscsemi.cn 1 isc & .

2SK1464 : Ordering number:EN3467 Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. N-Channel Silicon MOSFET 2SK1464 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2076B [2SK1464] 16.0 3.4 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 2.8 2.0 1.0 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 5.45 Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Drain-to-Source Breakdown Vol.

2SK1464 : ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS=900 (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VALUE UNI T 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 8 A Ptot Total Dissipation@TC=25℃ 80 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.cn 1 isc & iscsemi is re.

2SK1465 : Ordering number:EN3468 Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. N-Channel Silicon MOSFET 2SK1465 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2077A [2SK1465] 20.0 3.3 5.0 26.0 6.0 2.0 1.0 20.7 2.0 3.4 1.2 1 23 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Conditions PW≤10µs, duty cycle≤1% Tc=25°C 5.45 5.45 2.8 0.6 1 : Gate 2 : Drain 3 : Source SANYO : TO-3PBL Ratings 900 ±30 8 16 200 3.5 150 –55 to +150 Uni.

2SK1465 : ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS=900 (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VALUE UNI T 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 8 A Ptot Total Dissipation@TC=25℃ 200 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SK1465 isc website:www.iscsemi.cn 1 isc & isc.

2SK1466 : Ordering number:EN3469 Features · Low ON-state resistance. · Ultrahigh-speed switching. · Converters. N-Channel Silicon MOSFET 2SK1466 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2077A [2SK1466] 20.0 3.3 5.0 26.0 6.0 2.0 1.0 20.7 2.0 3.4 1.2 1 23 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Conditions PW≤10µs, duty cycle≤1% Tc=25°C 5.45 5.45 2.8 0.6 1 : Gate 2 : Drain 3 : Source SANYO : TO-3PBL Ratings 900 ±30 16 32 250 3.5 150 –55 to +150 Un.

2SK1466 : ·Drain Current –ID=16A@ TC=25℃ ·Drain Source Voltage- : VDSS=900 (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VALUE UNI T 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 16 A Ptot Total Dissipation@TC=25℃ 250 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W Rth j-a Thermal Resistance,Junction to Ambien.

2SK1467 : Ordering number:EN3508A Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. N-Channel Silicon MOSFET 2SK1467 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2062A [2SK1467] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 3.0 1 0.75 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions Tc=25°C Mounted on a ceramic board (250mm2×0.8mm) Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Vo.




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